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1. (WO2001035452) PRODUCTION METHOD FOR SILICON EPITAXIAL WAFER AND SILICON EPITAXIAL WAFER

Pub. No.:    WO/2001/035452    International Application No.:    PCT/JP2000/007833
Publication Date: Fri May 18 01:59:59 CEST 2001 International Filing Date: Thu Nov 09 00:59:59 CET 2000
IPC: H01L 21/265
H01L 21/324
H01L 21/74
Applicants: SHIN-ETSU HANDOTAI CO., LTD.

EBARA, Koji

OSE, Hiroki

KASAHARA, Yasuo

Inventors: EBARA, Koji

OSE, Hiroki

KASAHARA, Yasuo

Title: PRODUCTION METHOD FOR SILICON EPITAXIAL WAFER AND SILICON EPITAXIAL WAFER
Abstract:
A production method for an epitaxial wafer having buried ion implantation layers (71', 72'), as a result of effectively preventing the occurrence of surface roughness on ion implantation layers (71, 72) even without a pre-implantation oxidizing treatment by conducting a heat treatment for crystal recovery after ion implantation in a hydrogen atmosphere, wherein ion implantation is implemented with a pre-implantation oxidizing treatment omitted and therefore with a photoresist film only used as a mask (64). Elimination of a positive oxidizing film forming onto an epitaxial layer (3) including a pre-implantation oxidizing can reduce the number of heat histories applied to the buried ion implantation layers (71', 72') to effectively prevent a lateral diffusion. In addition, elimination of the forming/removal of an oxidizing film can dramatically reduce the number of processes for producing an epitaxial wafer.