Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2001034882) SILICON SINGLE CRYSTAL WAFER AND PRODUCTION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/034882 International Application No.: PCT/JP2000/007641
Publication Date: 17.05.2001 International Filing Date: 31.10.2000
IPC:
C30B 15/00 (2006.01) ,C30B 25/12 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
12
Substrate holders or susceptors
Applicants:
TAMATSUKA, Masaro [JP/JP]; JP (UsOnly)
SHIN-ETSU HANDOTAI CO., LTD. [JP/JP]; 4-2, Marunouchi 1-chome Chiyoda-ku Tokyo 100-0005, JP (AllExceptUS)
Inventors:
TAMATSUKA, Masaro; JP
Agent:
ISHIHARA, Shoji; No. 302, Wakai Building 7-8, Higashi-Ikebukuro 3-chome Toshima-ku Tokyo 170-0013, JP
Priority Data:
11/32050711.11.1999JP
Title (EN) SILICON SINGLE CRYSTAL WAFER AND PRODUCTION METHOD THEREFOR
(FR) TRANCHE DE SILICIUM MONOCRISTALLIN ET PROCEDE DE FABRICATION
Abstract:
(EN) A silicon single crystal wafer which is improved in a slip resistance at a portion where a CZ silicon single crystal wafer to be heat-treated contacts a heat-treating boat, and which is obtained by a very simple and low-cost method. The silicon single crystal wafer is obtained by pulling up, under a condition that an OSF ring region is formed at the outer peripheral portion of a silicon single crystal rod, the silicon single crystal rod that is grown by a Czochralski method, whereby at least a portion, where the silicon single crystal wafer contacts the boat, consists of the OSF ring region at heat treating.
(FR) Cette invention concerne une tranche de silicium monocristallin présentant des caractéristiques améliorées en termes de résistance au glissement dans une zone où une telle tranche appelée à subir un traitement thermique se trouve en contact avec un sabot chauffant. Selon ce procédé de fabrication très simple et peu coûteux, la tranche de silicium monocristallin s'obtient en tirant, en conditions où une région annulaire OSF se forme à la périphérie d'une tige de silicium monocristallin, une telle tige selon un procédé de Czochralski. Une partie au moins de la tranche de silicium monocristallin correspondant à la zone de contact de la tranche avec le porte-échantillon est constituée par la région annulaire OSF lors du traitement thermique.
front page image
Designated States: JP, KR, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)