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Machine translation
1. (WO2001034310) PROCESS FOR THE NON-GALVANIC TIN PLATING OF COPPER OR COPPER ALLOYS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/034310    International Application No.:    PCT/US2000/030983
Publication Date: 17.05.2001 International Filing Date: 09.11.2000
Chapter 2 Demand Filed:    12.06.2001    
IPC:
C23C 18/31 (2006.01), C23C 18/48 (2006.01)
Applicants: ENTHONE INC. [US/US]; 350 Frontage Road, West Haven, CT 06516 (US) (For All Designated States Except US).
BELL, Jane [DE/DE]; (DE) (For US Only).
HEYER, Joachim [DE/DE]; (DE) (For US Only).
HUPE, Jurgen [DE/DE]; (DE) (For US Only).
KALKER, Ingo [DE/DE]; (DE) (For US Only).
KLEINFELD, Marlies [DE/DE]; (DE) (For US Only)
Inventors: BELL, Jane; (DE).
HEYER, Joachim; (DE).
HUPE, Jurgen; (DE).
KALKER, Ingo; (DE).
KLEINFELD, Marlies; (DE)
Agent: BAIN, Robert, M.; Senniger, Powers, Leavitt & Roedel, One Metropolitan Square, 16th Floor, St. Louis, MI 63102 (US)
Priority Data:
199 54 613.4 12.11.1999 DE
Title (EN) PROCESS FOR THE NON-GALVANIC TIN PLATING OF COPPER OR COPPER ALLOYS
(FR) PROCEDE DESTINE A L'ETAMAGE NON GALVANIQUE DU CUIVRE OU D'ALLIAGES DE CUIVRE
Abstract: front page image
(EN)The invention describes a process for non-galvanic tin plating of copper and copper alloys by precipitation of tin from methanesulphonic acid and tin-containing electrolytes, containing a complexing agent. In describing a process by which a durable tin layer which can be soldered is created, which, at the same time, prevents liberation of the base material, this invention discloses that the electrolytes have at least one foreign metal added to form a diffusion barrier in the tin layer.
(FR)L'invention décrit un procédé servant à l'étamage non galvanique du cuivre et d'alliages de cuivre par précipitation d'étain, à partir d'électrolytes contenant de l'étain, renfermant de l'acide méthanesulfonique et un agent complexant. L'invention, de par sa description d'un procédé destiné à créer une couche d'étain durable pouvant être soudée, montre qu'au moins un métal étranger est ajouté aux électrolytes pour former une barrière de diffusion dans la couche d'étain.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)