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1. (WO2001033644) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/033644    International Application No.:    PCT/JP2000/007657
Publication Date: 10.05.2001 International Filing Date: 31.10.2000
IPC:
G01J 5/10 (2006.01), H01L 23/34 (2006.01)
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006-banchi, Oaza-Kadoma, Kadoma-shi, Osaka 571-8501 (JP) (For All Designated States Except US).
KOMOBUCHI, Hiroyoshi [JP/JP]; (JP) (For US Only).
CHATANI, Yoshikazu [JP/JP]; (JP) (For US Only).
YAMADA, Takahiro [JP/JP]; (JP) (For US Only).
NISHIO, Rieko [JP/JP]; (JP) (For US Only).
UOZUMI, Hiroaki [JP/JP]; (JP) (For US Only).
MASUYAMA, Masayuki [JP/JP]; (JP) (For US Only).
YAMAGUCHI, Takumi [JP/JP]; (JP) (For US Only)
Inventors: KOMOBUCHI, Hiroyoshi; (JP).
CHATANI, Yoshikazu; (JP).
YAMADA, Takahiro; (JP).
NISHIO, Rieko; (JP).
UOZUMI, Hiroaki; (JP).
MASUYAMA, Masayuki; (JP).
YAMAGUCHI, Takumi; (JP)
Agent: IKEUCHI, Hiroyuki; Suite 401, Umeda Plaza Building, 3-25, Nishitenma 4-chome,, Kita-ku, Osaka-shi, Osaka 530-0047 (JP)
Priority Data:
11/310553 01.11.1999 JP
11/329516 19.11.1999 JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
(FR) DISPOSITIF A SEMI-CONDUCTEUR ET SON PROCEDE DE FABRICATION
Abstract: front page image
(EN)A semiconductor device comprises a silicon substrate, a thermal insulator layer including silicon oxide, and a heat detector. The thermal insulator layer includes a hollow or a hole with a diameter greater than its opening. At least part of the hollow or hole is formed in the silicon oxide.
(FR)L'invention concerne un dispositif à semi-conducteur comprenant un substrat de silicium, une couche thermo-isolante comprenant un oxyde de silicium et un détecteur thermique. La couche thermo-isolante comprend un orifice ou un creux présentant un diamètre supérieur à son ouverture. Cet orifice ou creux est formé au moins partiellement dans l'oxyde de silicium.
Designated States: KR, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)