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Machine translation
1. (WO2001033633) SEMICONDUCTOR MEMORY AND METHOD OF DRIVING SEMICONDUCTOR MEMORY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/033633    International Application No.:    PCT/JP2000/007533
Publication Date: 10.05.2001 International Filing Date: 27.10.2000
IPC:
G11C 11/22 (2006.01), H01L 21/28 (2006.01), H01L 29/423 (2006.01), H01L 29/51 (2006.01), H01L 29/78 (2006.01)
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501 (JP) (For All Designated States Except US).
SHIMADA, Yasuhiro [JP/JP]; (JP) (For US Only).
ARITA, Koji [JP/JP]; (JP) (For US Only).
UCHIYAMA, Kiyoshi [JP/US]; (US) (For US Only)
Inventors: SHIMADA, Yasuhiro; (JP).
ARITA, Koji; (JP).
UCHIYAMA, Kiyoshi; (US)
Agent: MAEDA, Hiroshi; Taihei Building, 4-8, Utsubohonmachi 1-chome, Nishi-ku, Osaka-shi, Osaka 550-0004 (JP)
Priority Data:
11/309329 29.10.1999 JP
Title (EN) SEMICONDUCTOR MEMORY AND METHOD OF DRIVING SEMICONDUCTOR MEMORY
(FR) MEMOIRE A SEMICONDUCTEUR ET PROCEDE DE COMMANDE DE MEMOIRE A SEMICONDUCTEUR
Abstract: front page image
(EN)Source and drain regions of a field-effect transistor with a channel region between them are formed on a semiconductor substrate. A first gate electrode having a gate length shorter than the channel length is formed on insulating film deposited over the semiconductor substrate. The first gate electrode is covered with ferroelectric film, both sides of which are in contact with the insulating film. A second gate electrode is formed to cover the ferroelectric film.
(FR)Dans cette invention, des régions source et des régions drain d'un transistor à effet de champ séparées par une région canal sont formées sur un substrat à semiconducteur. Une première gâchette présentant une porte plus courte que le canal est formée sur un film isolant appliqué sur le substrat à semiconducteur. La première gâchette est recouverte d'un film ferroélectrique, dont les deux faces sont en contact avec le film isolant. Une seconde gâchette est formée de manière à recouvrir le film ferroélectrique.
Designated States: US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)