Search International and National Patent Collections

1. (WO2001033622) SOLID-SOURCE DOPING FOR SOURCE/DRAIN OF FLASH MEMORY

Pub. No.:    WO/2001/033622    International Application No.:    PCT/US2000/029329
Publication Date: Fri May 11 01:59:59 CEST 2001 International Filing Date: Wed Oct 25 01:59:59 CEST 2000
IPC: H01L 21/225
H01L 21/336
Applicants: ADVANCED MICRO DEVICES, INC.
Inventors: THURGATE, Timothy
HUSTER, Carl, Robert
Title: SOLID-SOURCE DOPING FOR SOURCE/DRAIN OF FLASH MEMORY
Abstract:
A method of manufacturing a flash memory device in which minimal gate edge lifting is accomplished by minimally oxidizing the gate stack and exposed surface of the substrate, anisotropically etching the layer of oxide from the substrate, forming a doped solid source material on portions of the substrate in which source regions are to be formed and diffusing the dopants from the solid source material into the substrate.