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1. (WO2001031711) VERTICAL INSULATED GATE FIELD-EFFECT DEVICE AND METHOD OF MAKING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/031711 International Application No.: PCT/US2000/028773
Publication Date: 03.05.2001 International Filing Date: 18.10.2000
Chapter 2 Demand Filed: 03.05.2001
IPC:
H01L 29/06 (2006.01) ,H01L 29/423 (2006.01) ,H01L 29/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. [US/US]; 5005 E. McDowell Road - A230 Phoenix, AZ 85008, US
Inventors:
VENKATRAMAN, Prasad; US
SALIH, Ali; US
Agent:
ATKINS, Robert, D. ; Semiconductor Components Industries L.L.C. ON Semiconductor Intellectual Property Dept.-A230 P.O. Box 62890 Phoenix, AZ 85082-2890, US
Priority Data:
09/426,10822.10.1999US
Title (EN) VERTICAL INSULATED GATE FIELD-EFFECT DEVICE AND METHOD OF MAKING THE SAME
(FR) DISPOSITIF SEMI-CONDUCTEUR DOTE D'UNE ZONE DE BASE ONDULANTE ET PROCEDE CORRESPONDANT
Abstract:
(EN) A field effect device (30) uses a single continuous base region (40) having branches (82) with a generally undulating edge. A continuous gate layer (34) overlies the semiconductor substrate and is self-aligned to the plurality of base branches. The undulating structure of the base region improves channel density, and thus lowers on-resistance, and the use of a single base region ensures that all portions of the base region throughout the device will be at a substantially constant electric potential.
(FR) Un dispositif à effet de champ (30) utilise une seule zone de base continue (40) dotée de branches (82) avec un bord généralement ondulant. Une couche (34) de grille continue chevauche le substrat du semi-conducteur et est auto-aligné avec la pluralité de branches de base. La structure ondulante de la zone de base améliore la densité de canaux et abaisse ainsi la résistance à l'état passant et l'utilisation d'une seule zone de base garantit que toutes les parties de la zone de base à travers le dispositif seront à un potentiel électrique pratiquement constant.
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, UZ, VN, YU, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)