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1. (WO2001031705) METHODS FOR FORMING CO-AXIAL INTERCONNECT IN A CMOS PROCESS

Pub. No.:    WO/2001/031705    International Application No.:    PCT/US2000/022516
Publication Date: Fri May 04 01:59:59 CEST 2001 International Filing Date: Thu Aug 17 01:59:59 CEST 2000
IPC: H01L 21/768
H01L 23/522
Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V.
PHILIPS SEMICONDUCTORS, INC.
Inventors: WELING, Milind
BOTHRA, Subhas
GABRIEL, Calvin, Todd
MISHELOFF, Michael
Title: METHODS FOR FORMING CO-AXIAL INTERCONNECT IN A CMOS PROCESS
Abstract:
A method of forming a co-axial interconnect line in a dielectric layer is provided. The method includes defining a trench in the dielectric layer and then forming a shield metallization layer within the trench. After forming the shield metallization layer, a conformal oxide layer is deposited within the shield metallization layer. A center conductor is then formed within the conformal oxide layer. Once the center conductor is formed, a fill oxide layer is deposited over the center conductor. A cap metallization layer is then formed over the fill oxide layer and is in contact with the shield metallization layer.