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1. (WO2001031683) PLASMA DOPING SYSTEM COMPRISING A HOLLOW CATHODE

Pub. No.:    WO/2001/031683    International Application No.:    PCT/US2000/025803
Publication Date: Fri May 04 01:59:59 CEST 2001 International Filing Date: Thu Sep 21 01:59:59 CEST 2000
IPC: C23C 14/48
H01J 37/34
Applicants: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Inventors: GOECKNER, Matthew, J.
FANG, Ziwei
Title: PLASMA DOPING SYSTEM COMPRISING A HOLLOW CATHODE
Abstract:
A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a space between the anode and the target cathode. The space in which the ionizable gas is provided is surrounded by the hollow cathode. The hollow cathode has either a circular or rectangular cross-section.