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1. (WO2001030715) FLUORIDE GAS ETCHING OF SILICON WITH IMPROVED SELECTIVITY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/030715 International Application No.: PCT/US2000/028333
Publication Date: 03.05.2001 International Filing Date: 13.10.2000
Chapter 2 Demand Filed: 21.05.2001
IPC:
H01L 21/306 (2006.01) ,H01L 21/308 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
Applicants:
PATEL, Satyadev, R. [US/US]; US (UsOnly)
SCHAADT, Gregory, P. [US/US]; US (UsOnly)
MACDONALD, Douglas, B. [US/US]; US (UsOnly)
REFLECTIVITY, INC. [US/US]; Suite 103 3910 Freedom Circle Santa Clara, CA 95054, US (AllExceptUS)
Inventors:
PATEL, Satyadev, R.; US
SCHAADT, Gregory, P.; US
MACDONALD, Douglas, B.; US
Agent:
MUIR, Gregory, R.; Reflectivity, Inc. Suite 103 3910 Freedom Circle Santa Clara, CA 95054, US
Priority Data:
09/427,84126.10.1999US
Title (EN) FLUORIDE GAS ETCHING OF SILICON WITH IMPROVED SELECTIVITY
(FR) GRAVURE DE SILICIUM AUX GAZ DE FLUORURE AVEC UNE SELECTIVITE AMELIOREE
Abstract:
(EN) The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by the addition of non-etchant gaseous additives to the etchant gas. An additional discovery is that non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity.
(FR) La présente invention concerne la gravure d'une partie de silicium sacrificiel dans une microstructure telle qu'une structure microélectromécanique, par l'utilisation de gaz de gravure qui sont des fluorures de gaz nobles ou des fluorures d'hydrogène. La gravure est réalisée avec une sélectivité plus élevée à la partie de silicium qu'à d'autres parties de la microstructure, grâce à l'adjonction au gaz de gravure d'un additif gazeux inapte à la gravure. Il a été également découvert que des additifs gazeux inaptes à la gravure ayant une masse molaire moyenne inférieure au nitrogène moléculaire, présentent d'importants avantages par rapport à des additifs gazeux de masse molaire supérieure, la gravure étant réalisée en un temps inférieur tout en présentant les mêmes améliorations du point de vue de la sélectivité.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)