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Machine translation
1. (WO2001030511) LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF THIN FILM MAGNETS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/030511    International Application No.:    PCT/US2000/029517
Publication Date: 03.05.2001 International Filing Date: 26.10.2000
Chapter 2 Demand Filed:    16.02.2001    
IPC:
C23C 16/30 (2006.01), C23C 16/44 (2006.01), H01F 1/42 (2006.01), H01F 10/00 (2006.01), H01F 10/28 (2006.01), H01F 41/22 (2006.01)
Applicants: UNIVERSITY OF UTAH RESEARCH FOUNDATION [US/US]; 210 Park Building, Salt Lake City, UT 84112 (US) (For All Designated States Except US).
OHIO STATE UNIVERSITY RESEARCH FOUNDATION [US/US]; 1960 Kenny Road, Columbus, OH 43120 (US) (For All Designated States Except US).
MILLER, Joel, S. [US/US]; (US) (For US Only).
POKHODNYA, Kostyantyn, I. [UA/US]; (US) (For US Only)
Inventors: MILLER, Joel, S.; (US).
POKHODNYA, Kostyantyn, I.; (US)
Agent: BOND, Laurence, B.; Trask Britt, P.O. Box 2550, Salt Lake City, UT 84110 (US)
Priority Data:
60/161,380 26.10.1999 US
Title (EN) LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF THIN FILM MAGNETS
(FR) DEPOT CHIMIQUE EN PHASE VAPEUR A FAIBLE TEMPERATURE D'AIMANTS A FILM MINCE
Abstract: front page image
(EN)A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO)6) and bis(benzene)vanadium (V(C6H6)2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90 °C and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40 °C and 70 °C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.
(FR)L'invention concerne un aimant à film mince issu d'une réaction en phase gazeuse et constitué de tétracyanoéthylène (TCNE) ou de 7,7,8,8-tétracyano-P-quinodiméthane (TCNQ) et d'un composé contenant du vanadium, tel que l'hexacarbonyle de vanadium (V(CO)6) et le bis(benzène)vanadium (V(C6H6)2), ainsi qu'un procédé de formation d'un film mince magnétique sur au moins un substrat par dépôt chimique en phase vapeur (CVD) à une température de traitement n'excédant pas 90 °C environ et en absence de solvant. Ce film mince magnétique peut notamment être appliqué sur des substrats souples ou rigides à des températures variant entre 40 °C et 70 °C. Il présente une bonne stabilité au contact de l'air, et peut être appliqué sur de nombreux types de substrats.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)