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1. (WO2001029280) DEPOSITION OF TRANSITION METAL CARBIDES

Pub. No.:    WO/2001/029280    International Application No.:    PCT/US2000/028537
Publication Date: Apr 26, 2001 International Filing Date: Oct 16, 2000
IPC: C23C 16/08
C23C 16/32
C23C 16/44
C30B 25/02
C30B 29/02
C30B 29/36
C30B 29/38
H01L 21/285
H01L 21/768
H01L 23/532
Applicants: ASM AMERICA, INC.
ASM MICROCHEMISTRY OY
ELERS, Kai-Erik
HAUKKA, Suvi, P.
SAANILA, Ville, Antero
KAIPIO, Sari, Johanna
SOININEN, Pekka, Juha
Inventors: ELERS, Kai-Erik
HAUKKA, Suvi, P.
SAANILA, Ville, Antero
KAIPIO, Sari, Johanna
SOININEN, Pekka, Juha
Title: DEPOSITION OF TRANSITION METAL CARBIDES
Abstract:
The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers (6) within integrated circuits having trench (1) and via (2) openings.