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Machine translation
1. (WO2001026159) LATERAL RF MOS DEVICE WITH IMPROVED BREAKDOWN VOLTAGE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/026159    International Application No.:    PCT/US2000/040916
Publication Date: 12.04.2001 International Filing Date: 14.09.2000
Chapter 2 Demand Filed:    05.04.2001    
IPC:
H01L 29/78 (2006.01)
Applicants: XEMOD, INC. [US/US]; 3350 Scott Boulevard, Bldg. 49, Santa Clara, CA 95054 (US)
Inventors: D'ANNA, Pablo, E.; (US)
Agent: TANKHILEVICH, Boris, G.; Law Offices of Boris G. Tankhilevich, 536 North Civic Drive #A, Walnut Creek, CA 94596 (US)
Priority Data:
09/413,912 04.10.1999 US
Title (EN) LATERAL RF MOS DEVICE WITH IMPROVED BREAKDOWN VOLTAGE
(FR) DISPOSITIF MOS RF LATERAL A TENSION DE CLAQUAGE AMELIOREE
Abstract: front page image
(EN)The lateral RF MOS device having two drain drift regions (366, 368) and a conductive plug (361) source connection structure is disclosed. The usage of two drain drift regions (366, 368) results in the increased source-drain breakdown voltage and in increased maximum drain current density. The lateral RF MOS device of the present invention can be used for high power and high frequency applications.
(FR)L'invention concerne un dispositif MOS RF latéral (Fig. 6) comprenant deux zones de migration de drain (366, 368) ainsi qu'une structure de connexion de source de fiche conductrice (361). L'utilisation de deux zones de migration de drain (366, 368) permet d'augmenter la tension de claquage source-drain et la densité de courant de drain maximale. Le dispositif MOS RF latéral de la présente invention peut être utilisé dans des applications faisant intervenir une puissance et une fréquence élevées.
Designated States: CN, FI, JP, KR, SE.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: English (EN)
Filing Language: English (EN)