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1. (WO2001024267) TWO TRANSISTOR FLASH MEMORY CELL

Pub. No.:    WO/2001/024267    International Application No.:    PCT/EP2000/009573
Publication Date: Apr 5, 2001 International Filing Date: Sep 29, 2000
IPC: G11C 11/56
G11C 16/04
H01L 27/115
Applicants: INFINEON TECHNOLOGIES AG
Inventors: SHUM, Danny, Pak-Chum
Title: TWO TRANSISTOR FLASH MEMORY CELL
Abstract:
A two transistor cell NOR architecture flash memory is provided wherein the floating gate transistor is coupled between the selection transistor and an associated bit line. The flash memory is disposed within a triple well and operates according to a Fowler-Norheim tunnel mechanism.