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1. (WO2001024249) METHOD FOR PREVENTING DIFFUSION OF BORON IN SILICON BY ION IMPLANTATION OF CARBON
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2001/024249 International Application No.: PCT/FR2000/002686
Publication Date: 05.04.2001 International Filing Date: 28.09.2000
Chapter 2 Demand Filed: 27.04.2001
IPC:
H01L 21/265 (2006.01) ,H01L 21/331 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
331
Transistors
Applicants:
FRANCE TELECOM [FR/FR]; 6, place d'Alleray F-75015 Paris, FR (AllExceptUS)
COMMISSARIAT A L'ENERGIE ATOMIQUE [FR/FR]; 31-33, rue de la Fédération F-75015 Paris, FR (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, JP, LU, MC, NL, PT, SE)
REGOLINI, Jorge, Luis [FR/FR]; FR (UsOnly)
RIBOT, Pascal [FR/FR]; FR (UsOnly)
MORIN, Christine [FR/FR]; FR (UsOnly)
Inventors:
REGOLINI, Jorge, Luis; FR
RIBOT, Pascal; FR
MORIN, Christine; FR
Agent:
CASALONGA, Axel; Bureau D.A. Casalonga-Josse Morassistrasse 8 D-80469 Munich, DE
Priority Data:
99/1211529.09.1999FR
Title (EN) METHOD FOR PREVENTING DIFFUSION OF BORON IN SILICON BY ION IMPLANTATION OF CARBON
(FR) PROCEDE POUR EMPÊCHER LA DIFFUSION DE BORE DANS LE SILICIUM PAR IMPLANTATION IONIQUE DE CARBONE
Abstract:
(EN) The invention concerns a method for preventing the diffusion of boron present as a dopant in a predetermined region of a semiconductor component into at least an region adjacent to the predetermined region while making the component. The method consists in introducing by ion implantation in the predetermined region a dose of carbon ranging between 0.1 and 1 atom %. For a heterojunction bipolar transistor, said process is carried out after the base is formed.
(FR) L'invention concerne un procédé pour empêcher la diffusion de bore présent comme dopant dans une région prédéterminée d'un composant semi-conducteur dans au moins une région adjacente à la région prédéterminée au cours de la fabrication du composant. Pour ce faire, on introduit par implantation ionique dans la région prédéterminée une dose de carbone comprise entre 0,1 et 1 % atomique. Pour un transistor bipolaire à hétérojonction, on réalise cette opération après formation de la base.
front page image
Designated States: JP, KR, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: French (FR)
Filing Language: French (FR)