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1. (WO2001023649) WAFER, EPITAXIAL FILTER, AND METHOD OF MANUFACTURE THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/023649    International Application No.:    PCT/JP2000/006406
Publication Date: 05.04.2001 International Filing Date: 20.09.2000
IPC:
C30B 25/02 (2006.01), F24F 3/16 (2006.01), H01L 21/205 (2006.01)
Applicants: SHIN-ETSU HANDOTAI CO., LTD. [JP/JP]; 4-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 100-0005 (JP) (For All Designated States Except US).
MARUYAMA, Fumiaki [JP/JP]; (JP) (For US Only).
NAITO, Naoki [JP/JP]; (JP) (For US Only).
UCHIYAMA, Atsuo [JP/JP]; (JP) (For US Only)
Inventors: MARUYAMA, Fumiaki; (JP).
NAITO, Naoki; (JP).
UCHIYAMA, Atsuo; (JP)
Agent: ISHIHARA, Shoji; No. 302, Wakai Building, 7-8, Higashi-Ikebukuro 3-chome, Toshima-ku, Tokyo 170-0013 (JP)
Priority Data:
11/277255 29.09.1999 JP
Title (EN) WAFER, EPITAXIAL FILTER, AND METHOD OF MANUFACTURE THEREOF
(FR) TRANCHE, FILTRE EPITAXIAL ET LEUR PROCEDE DE FABRICATION
Abstract: front page image
(EN)The invention provides a quality silicon wafer unlikely to affect device performance while preventing boron contamination. Specifically, the amount of boron deposition on the surface of a silicon wafer is less than 1 x 10?10¿ atoms/cm?2¿. The ambient boron concentration is maintained below 15 ng/m?3¿ to manufacture a wafer with such little amount of boron deposition on the surface. A filter for a clean room is composed of a boron-free filter and a boron-adsorbing filter to reduce the ambient boron concentration.
(FR)L'invention porte sur une tranche de silicium de qualité ne pouvant affecter la performance d'un dispositif et empêchant la contamination par le bore. De manière spécifique, la quantité de bore déposée sur la surface d'une tranche de silicium est inférieure à 1 x 10?10¿ atomes/cm?2¿. La concentration de base du bore est maintenue au-dessous de 15 ng/m?3¿ pour fabriquer une tranche avec une faible quantité de bore déposée sur la surface. Un filtre pour salle blanche est constitué d'un filtre exempt de bore et d'un filtre adsorbant le bore afin de réduire la concentration de base du bore.
Designated States: KR, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)