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1. (WO2001006043) SUSCEPTORLESS SEMICONDUCTOR WAFER EPITAXIAL LAYER GROWTH METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/006043 International Application No.: PCT/US2000/012333
Publication Date: 25.01.2001 International Filing Date: 04.05.2000
Chapter 2 Demand Filed: 14.02.2001
IPC:
C23C 16/455 (2006.01) ,C23C 16/458 (2006.01) ,C23C 16/48 (2006.01) ,C30B 25/12 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
48
by irradiation, e.g. photolysis, radiolysis, particle radiation
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
12
Substrate holders or susceptors
Applicants: SEH AMERICA, INC.[US/US]; 4111 N.E. 112th Avenue Vancouver, WA 98682-6776, US
Inventors: DIETZE, Gerald, R.; US
HARTMANN, Dominic, A.; US
HUNSAKER, Michael; US
Agent: GOSNELL, Guy, R. ; Alston & Bird LLP Suite 4000 Bank of America Plaza 101 South Tryon Street Charlotte, NC 28280-4000, US
Priority Data:
09/353,19714.07.1999US
Title (EN) SUSCEPTORLESS SEMICONDUCTOR WAFER EPITAXIAL LAYER GROWTH METHOD
(FR) PROCEDE DE CROISSANCE DE COUCHE EPITAXIALE D'UNE PLAQUE SEMICONDUCTRICE SANS SUSCEPTEUR
Abstract:
(EN) A method for growing an epitaxial layer of semiconductor material on a semiconductor wafer. The method typically includes placing the wafer within a reaction chamber of an epitaxial reactor and supporting the wafer directly on a contact member of a wafer support during growth of the epitaxial layer, where the wafer support includes a void adjacent the contact member extending from the wafer to a bottom of the reaction chamber. The method also includes heating the wafer to a predetermined temperature without also heating a susceptor, and introducing a source gas including semiconductor constituents into the reaction chamber to facilitate epitaxial growth of semiconductor material on a surface of the wafer. The method also may include flowing the source gas through the void in the wafer support. The method additionally may include heating the wafer by radiating heat energy through the void in the wafer support to the back side of the wafer.
(FR) La présente invention concerne un procédé permettant la croissance d'une couche épitaxiale de matériau semiconducteur sur une plaque semiconductrice. Ce procédé consiste habituellement à placer la plaque dans une chambre à réaction d'un réacteur épitaxial et à faire porter cette plaque directement sur un élément de contact d'un support de plaque durant la croissance de la couche épitaxiale. Ce support de plaque comporte un vide près de l'élément de contact entre la plaque et un fond de la chambre à réaction. Ce procédé consiste aussi à chauffer la plaque à une température prédéterminée et ce, sans chauffer un suscepteur, à introduire un gaz source comprenant des constituants semiconducteurs dans la chambre à réaction de façon à faciliter la croissance épitaxiale du matériau semiconducteur sur une surface de la plaque. Ce procédé peut aussi consister à écouler le gaz source à travers le vide du support de plaque. Ce procédé peut en outre consister à chauffer la plaque par l'énergie de la chaleur rayonnante à travers le vide du support de la plaque au niveau du dos de la plaque.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)