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Machine translation
1. (WO2001004966) DIAMOND ULTRAVIOLET LUMINESCENT ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/004966    International Application No.:    PCT/JP2000/004301
Publication Date: 18.01.2001 International Filing Date: 29.06.2000
Chapter 2 Demand Filed:    06.12.2000    
IPC:
H01L 33/34 (2010.01), H01L 27/15 (2006.01)
Applicants: TOKYO GAS CO., LTD. [JP/JP]; 5-20, Kaigan 1-chome, Minato-ku, Tokyo 105-8527 (JP) (For All Designated States Except US).
HORIUCHI, Kenji [JP/JP]; (JP) (For US Only).
ISHIKURA, Takefumi [JP/JP]; (JP) (For US Only).
YAMASHITA, Satoshi [JP/JP]; (JP) (For US Only).
KAWAMURA, Aki [JP/JP]; (JP) (For US Only).
NAKAMURA, Kazuo [JP/JP]; (JP) (For US Only).
NAKAMURA, Kenichi [JP/JP]; (JP) (For US Only).
IDE, Takahiro [JP/JP]; (JP) (For US Only)
Inventors: HORIUCHI, Kenji; (JP).
ISHIKURA, Takefumi; (JP).
YAMASHITA, Satoshi; (JP).
KAWAMURA, Aki; (JP).
NAKAMURA, Kazuo; (JP).
NAKAMURA, Kenichi; (JP).
IDE, Takahiro; (JP)
Agent: SUMIYOSHI, Takio; Tamachi-Goto Building, 10-5, Shiba 4-chome, Minato-ku, Tokyo 108-0014 (JP)
Priority Data:
11/192554 07.07.1999 JP
2000/32096 09.02.2000 JP
Title (EN) DIAMOND ULTRAVIOLET LUMINESCENT ELEMENT
(FR) ELEMENT EMETTEUR D'ULTRAVIOLETS A DIAMANT
Abstract: front page image
(EN)A diamond ultraviolet luminescent element (10) having an injection luminescent diode structure includes high-quality boron-doped p-type diamond crystal (semiconductor layer) (1) synthesized under high pressure at high temperature; a phosphorus-doped n-type diamond crystal (n-type semiconductor layer) (3) formed on the first diamond surface by vapor-phase synthesis; an electrode (5) formed on the surface of the n-type semiconductor layer (3); and an electrode (7) formed on the surface of the p-type semiconductor layer (1). The luminescence (235nm) attributed to recombination of free excitons resulting from current injection dominates in ultraviolet luminescent element (10).
(FR)Cette invention concerne un élément émetteur de rayons ultraviolets à diamant (10) dont la structure à diode luminescente par injection comprend un diamant de haute qualité à dopage au bore de type p (couche semi-conductrice) (1) synthétisé sous haute pression et à haute température ; un diamant à dopage au phosphore de type n (couche semi-conductrice de type n) (3) formée sur la première surface du diamant par synthèse en phase vapeur ; une électrode (5) formée sur la surface de la couche semi-conductrice de type n (3) ; et une électrode (7) formée sur la surface de la couche semi-conductrice de type p (1). La luminescence (235 nm) attribuée à la recombinaison d'excitons libres due à l'injection de courant domine dans l'élément émetteur d'ultraviolets (10)
Designated States: JP, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)