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1. (WO2001004960) SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME MANUFACTURING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/004960    International Application No.:    PCT/JP2000/004478
Publication Date: 18.01.2001 International Filing Date: 06.07.2000
IPC:
H01L 21/762 (2006.01), H01L 21/8249 (2006.01)
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 571-8501 (JP) (For All Designated States Except US).
OHNISHI, Teruhito [JP/JP]; (JP) (For US Only).
ASAI, Akira [JP/JP]; (JP) (For US Only).
TAKAGI, Takeshi [JP/JP]; (JP) (For US Only).
SAITOH, Tohru [JP/JP]; (JP) (For US Only).
ICHIKAWA, Yo [JP/JP]; (JP) (For US Only).
HARA, Yoshihiro [JP/JP]; (JP) (For US Only).
YUKI, Koichiro [JP/JP]; (JP) (For US Only).
NOZAWA, Katsuya [JP/JP]; (JP) (For US Only).
KATAYAMA, Koji [JP/JP]; (JP) (For US Only).
KANZAWA, Yoshihiko [JP/JP]; (JP) (For US Only)
Inventors: OHNISHI, Teruhito; (JP).
ASAI, Akira; (JP).
TAKAGI, Takeshi; (JP).
SAITOH, Tohru; (JP).
ICHIKAWA, Yo; (JP).
HARA, Yoshihiro; (JP).
YUKI, Koichiro; (JP).
NOZAWA, Katsuya; (JP).
KATAYAMA, Koji; (JP).
KANZAWA, Yoshihiko; (JP)
Agent: MAEDA, Hiroshi; Taihei Building 4-8, Utsubohonmachi 1-chome, Nishi-ku, Osaka-shi, Osaka 550-0004 (JP)
Priority Data:
11/192706 07.07.1999 JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME MANUFACTURING
(FR) DISPOSITIF SEMI-CONDUCTEUR ET PROCEDE DE FABRICATION CORRESPONDANT
Abstract: front page image
(EN)In a bipolar transistor part, a base layer (20a) of SiGe single crystal and an emitter layer (26) of about 100% Si single crystal are formed sequentially on a collector diffused layer (9). Over both end parts of the base layer (20a), a base underlying insulating film (5a) and a base lead out electrode (22) of polysilicon are formed. The base layer (20a) has both end parts which have the same thickness as that of the base underlying insulating film (5a) and a central part which is thicker than both end parts. The base underlying insulating film (5a) is an oxide film which is common to the gate insulating films (5b, 5c) in the CMOS part. The stress caused by the difference in thermal expansion coefficient between the SiGe layer constituting the base layer and the base underlying insulating film (5a) can be reduced, and a highly reliable BiCMOS device can be realized.
(FR)Dans une pièce de transistor bipolaire, une couche de base (20a) de monocristal de SiGe et une couche émettrice (26) constituée presque à 100 % d'un monocristal de Si sont formées séquentiellement sur une couche diffusée collectrice (9). Sur les deux parties terminales de la couche de base (20a) sont formés un film isolant (5a) sous-jacent à la base et une électrode en polysilicium (22) de guidage de sortie de la base. Les deux parties terminales de la couche de base (20a) possèdent la même épaisseur que le film isolant (5a) sous-jacent à la base et la partie centrale de cette couche de base est plus épaisse que ses parties terminales. Ledit film isolant (5a) sous-jacent à la base est un film d'oxyde qui est commun aux films isolants (5b, 5c) de la grille dans la partie CMOS. Il est possible de réduire la contrainte créée par la différence de coefficient de dilatation thermique entre la couche SiGe constituant la couche de base et le film isolant (5a) sous-jacent à la base, et l'on obtient ainsi un dispositif BiCMOS de grande fiabilité.
Designated States: JP, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)