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1. (WO2001003195) ELECTRIC SEMICONDUCTOR ELEMENT WITH A CONTACT HOLE

Pub. No.:    WO/2001/003195    International Application No.:    PCT/DE2000/002113
Publication Date: Fri Jan 12 00:59:59 CET 2001 International Filing Date: Tue Jul 04 01:59:59 CEST 2000
IPC: H01L 21/768
H01L 29/04
Applicants: ROBERT BOSCH GMBH
GOERLACH, Alfred
GEBHARD, Marion
Inventors: GOERLACH, Alfred
GEBHARD, Marion
Title: ELECTRIC SEMICONDUCTOR ELEMENT WITH A CONTACT HOLE
Abstract:
An electric semiconductor element comprising a monocrystalline semiconductor substrate which is made, for example, out of silicon; an insulating layer (6) which is penetrated by a contact hole (30) on at least one point and arranged on the surface of the semiconductor substrate (1); in addition to a contact element which comes into contact with the semiconductor substrate (1) by means of the contact hole (30) and which is made of a material such as aluminium, whereby the semiconductor material of the substrate can be dissolved in an anisotropic process. The edges of the contact hole (30) are configured as diffusion-preventing structures.