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Machine translation
1. (WO2001003192) SOLID STATE IMAGE SENSING DEVICE AND PRODUCTION METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/003192 International Application No.: PCT/JP1999/003601
Publication Date: 11.01.2001 International Filing Date: 02.07.1999
IPC:
H01L 31/0216 (2006.01)
Applicants: KURIYAMA, Toshihiro[JP/JP]; JP (UsOnly)
MATSUDA, Yuji[JP/JP]; JP (UsOnly)
UCHIDA, Shinji[JP/JP]; JP (UsOnly)
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.[JP/JP]; 1006-banchi Oaza-Kadoma Kadoma-shi Osaka 571-8501, JP (AllExceptUS)
Inventors: KURIYAMA, Toshihiro; JP
MATSUDA, Yuji; JP
UCHIDA, Shinji; JP
Agent: IKEUCHI, Hiroyuki ; Umeda Plaza Building Suite 401 3-25, Nishitenma 4-chome Kita-ku, Osaka-shi Osaka 530-0047, JP
Priority Data:
Title (EN) SOLID STATE IMAGE SENSING DEVICE AND PRODUCTION METHOD THEREOF
(FR) CAPTEUR D'IMAGE A SEMICONDUCTEURS ET PROCEDE DE FABRICATION
Abstract: front page image
(EN) An antireflection film (25) consisting of an oxide having a refractive index of not less than 1.9 is formed above a light receiving unit (22) formed in a semiconductor substrate (21) of a solid state image sensing device, an applicable oxide consisting of a metal oxide such as titanium, zirconium, tantalum, indium and niobium.
(FR) L'invention concerne un film antiréfléchissant (25) à base d'oxyde dont l'indice de réfraction n'est pas inférieur à 1,9. Ce film est formé au-dessus d'une unité de réception de lumière (22) établie dans un substrat à semiconducteurs (21) de capteur d'image à semiconducteurs. L'oxyde considéré peut être un oxyde de métal du type titane, zirconium, tantale, indium et niobium.
Designated States: US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)