WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2001003171) METHOD FOR MAKING A THIN FILM USING PRESSURISATION
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/003171 International Application No.: PCT/FR2000/001828
Publication Date: 11.01.2001 International Filing Date: 29.06.2000
Chapter 2 Demand Filed: 15.12.2000
IPC:
H01L 21/20 (2006.01) ,H01L 21/762 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
76
Making of isolation regions between components
762
Dielectric regions
Applicants: ASPAR, Bernard[FR/FR]; FR (UsOnly)
BRUEL, Michel[FR/FR]; FR (UsOnly)
MORICEAU, Hubert[FR/FR]; FR (UsOnly)
COMMISSARIAT A L'ENERGIE ATOMIQUE[FR/FR]; 31-33, rue de la Fédération F-75752 Paris 15ème, FR (AllExceptUS)
Inventors: ASPAR, Bernard; FR
BRUEL, Michel; FR
MORICEAU, Hubert; FR
Agent: LEHU, Jean; Brevatome 3, rue du Docteur Lancereaux F-75008 Paris, FR
Priority Data:
99/0837930.06.1999FR
Title (EN) METHOD FOR MAKING A THIN FILM USING PRESSURISATION
(FR) PROCEDE DE REALISATION D'UN FILM MINCE UTILISANT UNE MISE SOUS PRESSION
Abstract:
(EN) The invention concerns a method for making a thin film from a solid material substrate (1) having a planar surface (2) which consists in: implanting gaseous species in the substrate (1) to form a layer of microcavities located at a depth relative to said planar surface (2) corresponding to the desired thickness for the film, the gaseous species being implanted in conditions capable of embrittling the substrate at the layer of microcavities; partially or completely separating the thin film from the rest of the substrate (1), said separation comprising a step which consists in supplying thermal energy and applying pressure on said planar surface (2).
(FR) L'invention concerne un procédé de réalisation d'un film mince à partir d'un substrat (1) de matériau solide présentant une face plane (2), comprenant : l'implantation d'espèces gazeuses dans le substrat (1) pour constituer une couche de microcavités située à une profondeur par rapport à ladite face plane (2) correspondant à l'épaisseur du film mince désiré, les espèces gazeuses étant implantées dans des conditions susceptibles de fragiliser le substrat au niveau de la couche de microcavités, la séparation partielle ou totale du film mince du reste du substrat (1), cette séparation comportant une étape d'apport d'énergie thermique et d'application de pression sur ladite face plane (2).
front page image
Designated States: JP, KR, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: French (FR)
Filing Language: French (FR)