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1. (WO2001003159) GAS DISTRIBUTION APPARATUS FOR SEMICONDUCTOR PROCESSING
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/003159 International Application No.: PCT/US2000/016147
Publication Date: 11.01.2001 International Filing Date: 12.06.2000
Chapter 2 Demand Filed: 11.01.2001
IPC:
C23C 16/44 (2006.01) ,C23C 16/455 (2006.01) ,H01J 37/32 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
Applicants:
DHINDSA, Rajinder [US/US]; US (UsOnly)
HAO, Fangli [CN/US]; US (UsOnly)
LENZ, Eric [US/US]; US (UsOnly)
LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, CA 94538-6470, US (AllExceptUS)
Inventors:
DHINDSA, Rajinder; US
HAO, Fangli; US
LENZ, Eric; US
Agent:
PETERSON, James, W.; Burns, Doane, Swecker & Mathis, LLP P.O. Box 1404 Alexandria, VA 22313-1404, US
Priority Data:
09/343,69030.06.1999US
Title (EN) GAS DISTRIBUTION APPARATUS FOR SEMICONDUCTOR PROCESSING
(FR) DISPOSITIF DE DISTRIBUTION DE GAZ POUR LE TRAITEMENT DE SEMI-CONDUCTEURS
Abstract:
(EN) A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate (20) and a showerhead (22) which are secured together to define a gas distribution chamber (24) therebetween. A baffle assembly (26) including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply (40) supplying process gas to a central portion (42) of the baffle chamber and a second gas supply (44) supplying a second process gas to a peripheral region (46) of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply.
(FR) Système de distribution de gaz servant à distribuer du gaz de façon uniforme ou non sur la surface d'un substrat de semi-conducteur. Ce système comprend une plaque de support (20) et une tête de pulvérisation (22) fixées l'une à l'autre, de manière à définir entre elles une chambre (24) de distribution de gaz. Un ensemble chicane (26) comportant une ou plusieurs chicanes est situé à l'intérieur de la chambre de distribution. Cet ensemble chicane comprend une première alimentation en gaz (40) alimentant en gaz de traitement une partie centrale (42) de la chambre et une deuxième alimentation en gaz (42) alimentant en un deuxième gaz de traitement une zone périphérique (46) de ladite chambre. Etant donné que la pression du gaz est plus élevée dans des emplacements plus proches des sorties de la première et de la deuxième alimentations en gaz, on peut augmenter l'uniformité de la pression du gaz du côté arrière de la tête de pulvérisation davantage que s'il s'agissait d'une seule alimentation en gaz.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)