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1. (WO2001003126) HIGH DENSITY NON-VOLATILE MEMORY DEVICE

Pub. No.:    WO/2001/003126    International Application No.:    PCT/US2000/017847
Publication Date: Fri Jan 12 00:59:59 CET 2001 International Filing Date: Thu Jun 29 01:59:59 CEST 2000
IPC: C07D 487/22
C07D 519/00
C07F 17/02
G11C 11/56
G11C 13/02
H01L 27/28
H01L 51/30
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
NORTH CAROLINA STATE UNIVERSITY
BOCIAN, David, F.
KUHR, Werner, G.
LINDSEY, Jonathan, S.
CLAUSEN, Peter, Christian
GRYKO, Daniel, Tomasz
Inventors: BOCIAN, David, F.
KUHR, Werner, G.
LINDSEY, Jonathan, S.
CLAUSEN, Peter, Christian
GRYKO, Daniel, Tomasz
Title: HIGH DENSITY NON-VOLATILE MEMORY DEVICE
Abstract:
This invention provides novel high density memory devices (Fig. 3) that are electrically addressable permitting effective reading and writing, that provide a high memory density (102), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.