Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2001002908) METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, OPTICAL MASK USED THEREFOR, METHOD FOR MANUFACTURING THE SAME, AND MASK BLANKS USED THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/002908 International Application No.: PCT/JP2000/004339
Publication Date: 11.01.2001 International Filing Date: 30.06.2000
Chapter 2 Demand Filed: 30.06.2000
IPC:
G03F 1/30 (2012.01) ,G03F 1/32 (2012.01) ,G03F 1/54 (2012.01) ,G03F 1/56 (2012.01) ,G03F 1/68 (2012.01) ,G03F 1/70 (2012.01) ,G03F 7/00 (2006.01) ,G03F 7/20 (2006.01) ,G03F 9/00 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26
Phase shift masks [PSM]; PSM blanks; Preparation thereof
30
Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26
Phase shift masks [PSM]; PSM blanks; Preparation thereof
32
Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54
Absorbers, e.g. opaque materials
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54
Absorbers, e.g. opaque materials
56
Organic absorbers, e.g. photo-resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68
Preparation processes not covered by groups G03F1/20-G03F1/5096
70
Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9
Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Applicants:
HASEGAWA, Norio [JP/JP]; JP (UsOnly)
TERASAWA, Tsuneo [JP/JP]; JP (UsOnly)
TANAKA, Toshihiko [JP/JP]; JP (UsOnly)
HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101-8010, JP (AllExceptUS)
Inventors:
HASEGAWA, Norio; JP
TERASAWA, Tsuneo; JP
TANAKA, Toshihiko; JP
Agent:
TSUTSUI, Yamato; Tsutsui & Associates 3F Azeria Bldg. 1-1, Nishi-shinjuku 8-chome Shinjuku-ku, Tokyo 160-0023, JP
Priority Data:
11/18522130.06.1999JP
Title (EN) METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, OPTICAL MASK USED THEREFOR, METHOD FOR MANUFACTURING THE SAME, AND MASK BLANKS USED THEREFOR
(FR) PROCEDE DE FABRICATION D'UN DISPOSITIF DE CIRCUIT INTEGRE A SEMICONDUCTEUR, MASQUE OPTIQUE UTILISE A CET EFFET, SON PROCEDE DE FABRICATION, ET EBAUCHES DE MASQUE UTILISEES A CET EFFET
Abstract:
(EN) When a photomask (1PA1) is installed in a predetermined apparatus such as an inspection apparatus or an exposure apparatus, the photomask (1PA1) is inspected or exposed while the area where no light-shielding pattern (1b) nor mark pattern (1mr) formed of a resist film is present on a major surface of the mask base (1a) of the photomask (1PA1) is in contact with an installation part (2) of the predetermined apparatus. Thus, in a method for manufacturing a semiconductor integrated circuit device by using a photomask for allowing a resist film to serve as a light-shielding film, few or no foreign matters are produced.
(FR) Lorsqu'un photomasque (1PA1) est installé dans un appareil prédéterminé tel qu'un appareil d'inspection ou un appareil d'exposition, ce photomasque (1PA1) est inspecté ou exposé alors que la surface exempte de motif (1b) de protection contre la lumière et de motif de marque (1mr) formée d'une couche de résistance sur la totalité de la surface de la base (1a) du photomasque (1PA1) est en contact avec une partie d'installation (2) de l'appareil prédéterminé. Ainsi, dans un procédé de fabrication d'un dispositif de circuit intégré à semiconducteur consistant à utiliser un masque photographique pour permettre à une couche de résistance de servir de couche de protection contre la lumière, peu ou pas de matières étrangères sont produites.
front page image
Designated States: CN, JP, KR, SG, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)