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1. (WO2001001484) TRENCH MOS-TRANSISTOR

Pub. No.:    WO/2001/001484    International Application No.:    PCT/DE2000/001772
Publication Date: Fri Jan 05 00:59:59 CET 2001 International Filing Date: Wed May 31 01:59:59 CEST 2000
IPC: H01L 29/10
H01L 29/423
H01L 29/78
Applicants: INFINEON TECHNOLOGIES AG
LARIK, Joost
HIRLER, Franz
KOTEK, Manfred
PFIRSCH, Frank
Inventors: LARIK, Joost
HIRLER, Franz
KOTEK, Manfred
PFIRSCH, Frank
Title: TRENCH MOS-TRANSISTOR
Abstract:
The invention relates to a trench MOS-transistor, in which the body region (6) is strengthened by an implantation area (7) which faces the drain region (1, 2), in order to increase the avalanche resistance.