WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2001001482) METHOD FOR PRODUCING READ-ONLY MEMORY (ROM) CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/001482    International Application No.:    PCT/DE2000/001755
Publication Date: 04.01.2001 International Filing Date: 30.05.2000
Chapter 2 Demand Filed:    06.11.2000    
IPC:
H01L 21/8246 (2006.01)
Applicants: INFINEON TECHNOLOGIES AG [DE/DE]; St.-Martin-Strasse 53, D-81541 München (DE) (For All Designated States Except US).
WAWER, Peter [DE/DE]; (DE) (For US Only).
SPRINGMANN, Oliver [DE/DE]; (DE) (For US Only).
WOLF, Konrad [DE/DE]; (DE) (For US Only).
HEITZSCH, Olaf [DE/DE]; (DE) (For US Only).
HUCKELS, Kai [DE/DE]; (DE) (For US Only).
RENNEKAMP, Reinhold [DE/DE]; (DE) (For US Only).
RÖHRICH, Mayk [DE/DE]; (DE) (For US Only).
STEIN VON KAMIENSKI, Elard [DE/DE]; (DE) (For US Only).
KUTTER, Christoph [DE/DE]; (DE) (For US Only).
LUDWIG, Christoph [DE/DE]; (DE) (For US Only)
Inventors: WAWER, Peter; (DE).
SPRINGMANN, Oliver; (DE).
WOLF, Konrad; (DE).
HEITZSCH, Olaf; (DE).
HUCKELS, Kai; (DE).
RENNEKAMP, Reinhold; (DE).
RÖHRICH, Mayk; (DE).
STEIN VON KAMIENSKI, Elard; (DE).
KUTTER, Christoph; (DE).
LUDWIG, Christoph; (DE)
Agent: EPPING - HERMANN & FISCHER; Postfach 12 10 26, D-80034 München (DE)
Priority Data:
199 29 675.8 28.06.1999 DE
Title (DE) VERFAHREN ZUR HERSTELLUNG VON ROM-SPEICHERZELLEN
(EN) METHOD FOR PRODUCING READ-ONLY MEMORY (ROM) CELLS
(FR) PROCEDE DE PRODUCTION DE CELLULES DE MEMOIRE MORTE
Abstract: front page image
(DE)Die Erfindung betrifft ein Verfahren zur Herstellung von ROM-Speicherzellen, wobei unter Verwendung von Standardprozessen eine späte Programmierung im Prozeß ermöglicht ist. Die Programmierung erfolgt hierbei im Wesentlichen durch selbstjustierendes Ausbilden von Punch-Through-Gebieten (111) in jeweils zu programmierenden ROM-Speicherzellen (121) unter Verwendung von Steuerelektroden (104) als Maske.
(EN)The invention relates to a method for producing ROM memory cells, whereby late programming is possible in the process, using standard procedures. The programming takes place substantially by a self-regulating formation of punch-through areas (111) in each of the ROM memory cells (121) to be programmed, using control electrodes (104) as a mask.
(FR)L'invention concerne un procédé de production de cellules de mémoire morte, selon lequel, par la mise en oeuvre de processus standards, il est possible d'effectuer une programmation retardée dans le processus. Cette programmation se fait sensiblement par formation autoréglée de zones de percement (111) dans chaque cellule de mémoire morte (121) à programmer, au moyen d'électrodes de commande (104) servant de masque.
Designated States: BR, CN, IN, JP, KR, MX, RU, UA, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: German (DE)
Filing Language: German (DE)