WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2001001480) METHOD OF PROTECTING AN UNDERLYING WIRING LAYER DURING DUAL DAMASCENE PROCESSING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/001480    International Application No.:    PCT/US2000/040108
Publication Date: 04.01.2001 International Filing Date: 05.06.2000
Chapter 2 Demand Filed:    30.01.2001    
IPC:
H01L 21/768 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard, Santa Clara, CA 95052 (US) (For All Designated States Except US).
HUSSEIN, Makarem, A. [US/US]; (US) (For US Only).
MYERS, Alan, M. [US/US]; (US) (For US Only).
RECCHIA, Charles, H. [US/US]; (US) (For US Only).
SIVAKUMAR, Sam [US/US]; (US) (For US Only).
KANDAS, Angelo, W. [US/US]; (US) (For US Only)
Inventors: HUSSEIN, Makarem, A.; (US).
MYERS, Alan, M.; (US).
RECCHIA, Charles, H.; (US).
SIVAKUMAR, Sam; (US).
KANDAS, Angelo, W.; (US)
Agent: MALLIE, Michael, J.; Blakely, Sokoloff, Taylor & Zafman LLP, 12400 Wilshire Boulevard, 7th floor, Los Angeles, CA 90025 (US)
Priority Data:
09/345,586 30.06.1999 US
Title (EN) METHOD OF PROTECTING AN UNDERLYING WIRING LAYER DURING DUAL DAMASCENE PROCESSING
(FR) PROCEDE PERMETTANT DE PROTEGER UNE COUCHE DE CABLAGE SOUS-JACENTE LORS D'UN PROCEDE DE DOUBLE DAMASQUINAGE
Abstract: front page image
(EN)A method of forming an interconnection including the steps of forming a sacrificial material (160) that comprises a physical property that is generally insensitive to a photoreaction in a via (150) through a dielectric material (130) to a masking material (120) over a conductive material (110). The method also includes forming a trench (180) over in the dielectric material over the via (150) and removing the sacrificial material (160) from the via.
(FR)L'invention concerne un procédé de formation d'une interconnexion consistant à former un matériau sacrificiel (160) présentant une propriété physique, à savoir généralement une insensibilité à une photoréaction, dans une traversée (150), à travers un matériau diélectrique (130) et ce, jusqu'à un matériau (120) de masquage disposé sur un matériau conducteur (110). Le procédé consiste également à former une tranchée (180) dans le matériau diélectrique au-dessus de la traversée (150) et à éliminer la matériau sacrificiel (160) de ladite traversée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)