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Machine translation
1. (WO2001001472) METHOD AND APPARATUS FOR FORMING A FILM ON A SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2001/001472    International Application No.:    PCT/GB2000/002301
Publication Date: 04.01.2001 International Filing Date: 26.06.2000
IPC:
C23C 16/40 (2006.01), C23C 16/56 (2006.01), H01L 21/3105 (2006.01), H01L 21/311 (2006.01), H01L 21/316 (2006.01)
Applicants: TRIKON HOLDINGS LIMITED [GB/GB]; Coed Rhedyn, Ringland Way, Newport, Gwent. NP6 2TA (GB) (For All Designated States Except US).
GILES, Katherine [GB/GB]; (GB) (For US Only).
BEEKMANN, Knut [GB/GB]; (GB) (For US Only).
DOBSON, Christopher, David [GB/GB]; (GB) (For US Only).
MACNEIL, John [GB/GB]; (GB) (For US Only).
WILBY, Antony, Paul [GB/GB]; (GB) (For US Only)
Inventors: GILES, Katherine; (GB).
BEEKMANN, Knut; (GB).
DOBSON, Christopher, David; (GB).
MACNEIL, John; (GB).
WILBY, Antony, Paul; (GB)
Agent: DUNLOP, Brian, Kenneth, Charles; Wynne-Jones, Laine & James, 22 Rodney Road, Cheltenham, Gloucestershire. GL50 1JJ (GB)
Priority Data:
9914879.3 26.06.1999 GB
9922693.8 25.09.1999 GB
9922691.2 25.09.1999 GB
9922801.7 28.09.1999 GB
0000780.7 14.01.2000 GB
Title (EN) METHOD AND APPARATUS FOR FORMING A FILM ON A SUBSTRATE
(FR) PROCEDE ET APPAREIL PERMETTANT DE FORMER UN FILM SUR UN SUBSTRAT
Abstract: front page image
(EN)This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapour form a silicon containing organic compound and an oxidising agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2 plasma.
(FR)L'invention concerne un procédé et un appareil permettant de former un film sur un substrat. Ce procédé consiste à introduire dans une chambre, sous forme de gaz ou de vapeur, un composé organique contenant du silicium et un oxydant, en présence d'un plasma, afin de déposer un film sur le substrat et de laisser prendre ce film de sorte que les groupes contenant du carbone soient retenus dans le film. Dans des modes de réalisation particuliers, pour que la prise du film s'effectue, on l'expose à un plasma H2.
Designated States: CN, DE, GB, JP, KR, US.
Publication Language: English (EN)
Filing Language: English (EN)