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1. (WO2001001462) METHOD FOR PRODUCING A NOBLE-METAL ELECTRODE

Pub. No.:    WO/2001/001462    International Application No.:    PCT/DE2000/002033
Publication Date: Fri Jan 05 00:59:59 CET 2001 International Filing Date: Sat Jun 24 01:59:59 CEST 2000
IPC: C23C 16/04
C23C 16/18
H01L 21/02
H01L 21/285
Applicants: INFINEON TECHNOLOGIES AG
HINTERMAIER, Frank
HARTNER, Walter
SCHINDLER, Günther
Inventors: HINTERMAIER, Frank
HARTNER, Walter
SCHINDLER, Günther
Title: METHOD FOR PRODUCING A NOBLE-METAL ELECTRODE
Abstract:
The invention relates to a method for producing a structured noble-metal layer, in particular, for producing a structured noble-metal layer in an integrated circuit, which consists of the following stages: a) a substrate is prepared, comprising at least one catalytically active connection zone and at least one catalytically inactive insulation zone; and b) at least one organometallic compound of a noble metal is fed to the substrate at a temperature of between 0 ° and 120 °C in such a way that the noble metal is deposited selectively onto the catalytically active connection zone. The inventive method has the advantage that the layer material, which can often only be etched with difficulty, does not need to be directly structured. The desired structure of the layer is predetermined by the pre-structuring of the substrate in a connection zone and in an insulation zone and is created by the selective deposition process.