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1. (WO2001000710) PHOTOSENSITIVE LOW-PERMITTIVITY POLYIMIDE AND METHOD OF FORMING POSITIVE POLYIMIDE FILM PATTERN FROM THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2001/000710 International Application No.: PCT/JP2000/004173
Publication Date: 04.01.2001 International Filing Date: 26.06.2000
Chapter 2 Demand Filed: 19.01.2001
IPC:
C08G 73/10 (2006.01) ,G03F 7/004 (2006.01) ,G03F 7/023 (2006.01) ,G03F 7/039 (2006.01) ,H05K 1/00 (2006.01)
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
G
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
73
Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen or carbon, not provided for in groups C08G12/-C08G71/238
06
Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule; Polyhydrazides; Polyamide acids or similar polyimide precursors
10
Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
022
Quinonediazides
023
Macromolecular quinonediazides; Macromolecular additives, e.g. binders
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1
Printed circuits
Applicants: ITATANI, Hiroshi[JP/JP]; JP (UsOnly)
MATSUMOTO, Shunichi[JP/JP]; JP (UsOnly)
PI R & D CO., LTD.[JP/JP]; 12-5, Torihamacho Kanazawa-ku Yokohama-shi Kanagawa 236-0002, JP (AllExceptUS)
Inventors: ITATANI, Hiroshi; JP
MATSUMOTO, Shunichi; JP
Agent: TANIGAWA, Hidejiro; Tanigawa And Associates, Patent Firm Iwata Building 6F 5-12, Iidabashi 4-chome Chiyoda-ku Tokyo 102-0072, JP
Priority Data:
11/21767825.06.1999JP
Title (EN) PHOTOSENSITIVE LOW-PERMITTIVITY POLYIMIDE AND METHOD OF FORMING POSITIVE POLYIMIDE FILM PATTERN FROM THE SAME
(FR) POLYIMIDE PHOTOSENSIBLE A FAIBLE PERMITTIVITE ET OBTENTION D'UN MOTIF POUR FILM DE POLYIMIDE POSITIF OBTENU A PARTIR DUDIT POLYIMIDE
Abstract:
(EN) A photosensitive low-permittivity polyimide for use in applications where a low permittivity is required, such as interlayer dielectrics in semiconductor devices. The polyimide is a solvent-soluble polyimide which has positive photosensitivity in the presence of a photo-acid generator. It is obtained by the polycondensation of at least one aromatic tetracarboxylic dianhydride and at least one mainly aromatic diamine, wherein at least either of the at least one aromatic tetracarboxylic dianhydride and the at least one diamine as components of the polyimide contains a fluorine atom and/or the diamine comprises benzidine or a derivative thereof and/or a fluorene derivative. It has a specific permittivity of 2.90 or lower.
(FR) Cette invention concerne un polyimide photosensible à faible permittivité destiné à des applications nécessitant une faible permittivité, telles que des intercouches diélectriques dans des dispositifs semi-conducteurs. Ce polyimide est un polyimide soluble dans l'eau qui présente une photo-sensibilité positive en présence d'un générateur photo-acide. Il s'obtient par polycondensation d'au moins un dianhydre tétracarboxylique aromatique et d'au moins un diamine principalement aromatique. En tant que composante du polyimide, soit un moins un dianhydre tétracarboxylique aromatique, soit au moins un diamine principalement aromatique renferme un atome de fluor et/ou la diamine comprend de la benzidine ou un dérivé de la benzidine et/ou un dérivé de fluorène. Ce polyimide a une permittivité spécifique de 2,90 ou moins.
Designated States: JP, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)