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1. (WO2000075965) POWER MOSFET AND METHOD OF MAKING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2000/075965 International Application No.: PCT/US2000/015189
Publication Date: 14.12.2000 International Filing Date: 02.06.2000
Chapter 2 Demand Filed: 03.01.2001
IPC:
H01L 21/225 (2006.01) ,H01L 21/336 (2006.01) ,H01L 21/66 (2006.01) ,H01L 29/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
GENERAL SEMICONDUCTOR, INC. [US/US]; 10 Melville Park Road Melville, NY 11747, US
Inventors:
BLANCHARD, Richard, A.; US
Agent:
MAYER, Stuart, H.; Mayer, Fortkort & Williams Suite 250 200 Executive Drive West Orange, NJ 07052, US
Priority Data:
09/586,40702.06.2000US
60/137,40803.06.1999US
Title (EN) POWER MOSFET AND METHOD OF MAKING THE SAME
(FR) MOSFET DE PUISSANCE HAUTE TENSION A FAIBLE RESISTANCE A L'ETAT PASSANT
Abstract:
(EN) A power MOSFET is provided that includes a substrate (2) of a first conductivity type. An epitaxial layer (1) also of the first conductivity type is deposited on the substrate. First and second body regions (5a, 6a, 5b, 6b) are located in the epitaxial layer and define a drift region between them. The body regions have a second conductivity type. First and second source regions (7, 8) of the first conductivity type are respectively located in the first and second body regions. A plurality of trenches (44, 46) are located below the body regions in the drift region of the epitaxial layer. The trenches, which extend toward the substrate from the first and second body regions, are filled with a material that includes a dopant of the second conductivity type. The dopant is diffused from the trenches into portions of the epitaxial layer adjacent the trenches so as to form semiconductor regions (40, 42) of the second conductivity type under the body regions.
(FR) L'invention concerne un MOSFET (transistor à effet de champ de semi-conducteur d'oxyde de métal) de puissance comprenant un substrat d'un premier type de conductivité. Une couche épitaxiale également du premier type de conductivité est déposée sur le substrat. Une première et une seconde région de corps sont situées dans la couche épitaxiale et définissent une zone de dérive intermédiaire. Les régions de corps comportent un second type de conductivité. Une première et une seconde région source du premier type de conductivité sont respectivement situées dans la première et la seconde région de corps. Plusieurs tranchées sont situées en-dessous des régions de corps dans la région de dérive de la couche épitaxiale. Les tranchées, qui s'étendent en direction du substrat à partir de la première et de la deuxième région de corps, sont remplies d'une matière renfermant un dopant du second type de conductivité. Le dopant est diffusé des tranchées dans des parties de la couche épitaxiale adjacente aux tranchées.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020020010686KR1020070044487EP1192640JP2003524291 CN1360738AU2000054584