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Machine translation
1. (WO2000063955) PLASMA PROCESSING APPARATUS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2000/063955    International Application No.:    PCT/JP2000/002430
Publication Date: 26.10.2000 International Filing Date: 14.04.2000
Chapter 2 Demand Filed:    13.10.2000    
IPC:
C23C 16/458 (2006.01), C23C 16/46 (2006.01), H01L 21/00 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-chome, Minato-ku, Tokyo 107-8481 (JP) (For All Designated States Except US).
NGK INSULATORS, LTD. [JP/JP]; 2-56, Sudacho, Mizuho-ku, Nagoya-shi, Aichi 467-8530 (JP) (For All Designated States Except US).
KAWAKAMI, Satoru [JP/JP]; (JP) (For US Only).
IWABUCHI, Katsuhiko [JP/JP]; (JP) (For US Only).
KUWAJIMA, Ryo [JP/JP]; (JP) (For US Only).
USHIKOSHI, Ryusuke [JP/JP]; (JP) (For US Only).
YAMADA, Naohito [JP/JP]; (JP) (For US Only).
KAWAJIRI, Tetsuya [JP/JP]; (JP) (For US Only)
Inventors: KAWAKAMI, Satoru; (JP).
IWABUCHI, Katsuhiko; (JP).
KUWAJIMA, Ryo; (JP).
USHIKOSHI, Ryusuke; (JP).
YAMADA, Naohito; (JP).
KAWAJIRI, Tetsuya; (JP)
Agent: ITOH, Tadahiko; Yebisu Garden Place Tower, 32nd Floor, 20-3, Ebisu 4-chome, Shibuya-ku, Tokyo 150-6032 (JP)
Priority Data:
11/107479 15.04.1999 JP
Title (EN) PLASMA PROCESSING APPARATUS
(FR) DISPOSITIF DE TRAITEMENT AU PLASMA
Abstract: front page image
(EN)The temperature control of substrates (W) to be processed is improved in a plasma processing apparatus. A chamber (10) includes a cylindrical ceramic support (26). The upper end of the support (26) is hermetically connected to the back (24b) of a wafer stage (24) by solid-phase welding. The lower end of the support (26) is hermetically connected to the bottom (10b) of the chamber (10) through a lower cooling jacket (90) and O-rings (92, 96). The support (26) defines an atmospheric chamber (38) in which a cooling jacket (40) formed of disklike aluminum blocks is provided. The cooling jacket (40) is mounted on the back (24a) of the wafer stage (24) with a heat-conducting sheet (42).
(FR)Selon l'invention, on maîtrise mieux la température de substrats (W) à traiter dans un dispositif de traitement au plasma. Une chambre (10) comprend un support cylindrique en céramique (26). L'extrémité supérieure de ce support (26) est reliée de manière hermétique au dos (24b) d'un porte-plaquette (24) par un soudage à l'état solide. L'extrémité inférieure du support (26) est reliée de manière hermétique au fond (10b) de la chambre (10) par l'intermédiaire d'une chemise de refroidissement inférieure (90) et de joints toriques (92, 96). Le support (26) définit une chambre atmosphérique (38) dans laquelle on a monté la chemise de refroidissement (40) formée de blocs d'aluminium dissemblables. On a monté cette chemise (40) sur le dos (24a) du porte-plaquette (24) au moyen d'une feuille thermoconductrice (42).
Designated States: KR, SG, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)