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Machine translation
1. (WO2000062331) SEMICONDUCTOR HETEROSTRUCTURES WITH CRYSTALLINE SILICON CARBIDE ALLOYED WITH GERMANIUM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2000/062331    International Application No.:    PCT/US2000/008671
Publication Date: 19.10.2000 International Filing Date: 31.03.2000
Chapter 2 Demand Filed:    10.10.2000    
IPC:
H01L 21/04 (2006.01), H01L 29/161 (2006.01), H01L 29/165 (2006.01)
Applicants: UNIVERSITY OF DELAWARE [US/US]; 101 Hullihen Hall, Newark, DE 19711 (US) (For All Designated States Except US).
KOLODZEY, James [US/US]; (US).
KATULKA, Gary [US/US]; (US).
GUEDJ, Cyril [FR/FR]; (FR)
Inventors: KOLODZEY, James; (US).
KATULKA, Gary; (US).
GUEDJ, Cyril; (FR)
Agent: PEZZNER, Harold; Connolly Bove Lodge & Hutz LLP, 1220 Market Street, Wilmington, DE 19801 (US)
Priority Data:
60/127,554 02.04.1999 US
Title (EN) SEMICONDUCTOR HETEROSTRUCTURES WITH CRYSTALLINE SILICON CARBIDE ALLOYED WITH GERMANIUM
(FR) HETEROSTRUCTURES DE SEMI-CONDUCTEUR PRESENTANT UN ALLIAGE DE CARBURE DE SILICIUM CRISTALLIN ET DE GERMANIUM
Abstract: front page image
(EN)A semiconductor heterostructure (a) is formed by mixing the elemental semiconductor germanium (Ge) with the compound semiconductor silicon carbide (SiC) to form an alloy of silicon carbide: germanium (SiC:Ge). The alloy (SiCGe) could be used alone or in multilayered structures with other semiconductors to improve the performance of electronic and optical devices and circuits.
(FR)Selon l'invention on forme une hétérostructure de semi-conducteur en mélangeant le germanium élémentaire semi-conducteur avec le carbure de silicium semi-conducteur, afin de former un alliage carbure de silicium/germanium. Cet alliage présente des avantages par rapport au carbure de silicium pur et au germanium pur, et on peut l'utiliser seul ou dans des structures multicouches, avec d'autres semi-conducteurs, afin d'améliorer les performances de dispositifs électroniques et optiques et de circuits.
Designated States: AE, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)