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Machine translation
1. (WO2000059032) NONVOLATILE MEMORY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2000/059032    International Application No.:    PCT/US2000/004894
Publication Date: 05.10.2000 International Filing Date: 25.02.2000
Chapter 2 Demand Filed:    28.08.2000    
IPC:
H01L 21/336 (2006.01), H01L 21/8247 (2006.01), H01L 27/115 (2006.01), H01L 29/788 (2006.01)
Applicants: PROGRAMMABLE SILICON SOLUTIONS [US/US]; 97E Brokaw Road, Ste 250, Sunnyvale, CA 94086 (US) (For All Designated States Except US).
LIU, David, K. [US/US]; (US) (For US Only).
WONG, Ting-wah [US/US]; (US) (For US Only)
Inventors: LIU, David, K.; (US).
WONG, Ting-wah; (US)
Agent: TROP, Timothy, N.; Trop, Pruner, Hu & Miles, P.C., 8554 Katy Freeway, Suite 100, Houston, TX 77024 (US)
Priority Data:
09/277,640 26.03.1999 US
Title (EN) NONVOLATILE MEMORY
(FR) MEMOIRE REMANENTE
Abstract: front page image
(EN)A nonvolatile memory cell (10) which is highly scalable includes a cell formed in a triple well (28). A select transistor (14) can have a source (56) which also acts as the emitter of a lateral bipolar transistor (62). The lateral bipolar transistor (62) operates as a charge injector. The charge injector provides electrons for substrate hot electron injection of electrons onto the floating gate (22) for programming. The cell depletion/inversion region may be extended by forming a capacitor (50) as an extension of the control gate (27) over the substrate between the source (13) and channel (25a) of said sense transistor
(FR)L'invention concerne une cellule (10) de mémoire rémanente hautement modulable, qui comprend une cellule formée dans un puits triple (28). Un transistor de sélection (14) peut comporter une source (56) qui fonctionne également comme émetteur d'un transistor bipolaire latéral (62). Ce transistor bipolaire latéral (62) sert d'injecteur de charge. L'injecteur de charge fournit les électrons pour l'injection d'électrons chauds de substrat sur la grille flottante (22) en vue d'une programmation. La région de déplétion/inversion cellulaire peut être étendue par la formation d'un condensateur (50) et se présente sous forme d'une extension de la grille de commande (27) sur le substrat, entre la source (13) et le canal (25a) dudit transistor de détection.
Designated States: AE, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)