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1. (WO2000055893) SEMICONDUCTOR BASE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR CRYSTAL MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2000/055893 International Application No.: PCT/JP2000/001588
Publication Date: 21.09.2000 International Filing Date: 15.03.2000
Chapter 2 Demand Filed: 13.10.2000
IPC:
C30B 25/02 (2006.01) ,C30B 25/18 (2006.01) ,C30B 29/40 (2006.01) ,H01L 21/20 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
MITSUBISHI CABLE INDUSTRIES, LTD. [JP/JP]; 8, Nishinocho, Higashimukaijima Amagasaki-shi, Hyogo 660-0856, JP (AllExceptUS)
TADATOMO, Kazuyuki [JP/JP]; JP (UsOnly)
OKAGAWA, Hiroaki [JP/JP]; JP (UsOnly)
OUCHI, Yoichiro [JP/JP]; JP (UsOnly)
KOTO, Masahiro [JP/JP]; JP (UsOnly)
Inventors:
TADATOMO, Kazuyuki; JP
OKAGAWA, Hiroaki; JP
OUCHI, Yoichiro; JP
KOTO, Masahiro; JP
Agent:
TAKASHIMA, Hajime; Fujimura Yamato Seimei Bldg. 2-14, Fushimimachi 4-chome, Chuo-ku Osaka-shi, Osaka 541-0044, JP
Priority Data:
11/33559126.11.1999JP
11/33642126.11.1999JP
11/35304413.12.1999JP
11/7213317.03.1999JP
Title (EN) SEMICONDUCTOR BASE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR CRYSTAL MANUFACTURING METHOD
(FR) BASE DE SEMICONDUCTEUR ET SON PROCEDE DE FABRICATION ET PROCEDE DE FABRICATION DE CRISTAL SEMICONDUCTEUR
Abstract:
(EN) The growth surface of a substrate (1) is processed to have projections and recesses. The bottoms of the recesses may be covered with a mask. When a crystal is grown by vapor deposition by using this substrate, the material gas does not enter sufficiently into the recesses (12), and the crystal growth occurs only from the tops of the projections (11). As shown in Figure 1(b), crystal units (20) are produced at the initial stage of the crystal growth. As the crystal growth progresses, the crystal units grow laterally from the tops of the projections (11) and join one another to form a film. In due course, a crystal layer (2) covering the projections and recesses of the substrate (1) is formed leaving cavities (13) of the recesses, as shown in Figure 1(c). Thus a semiconductor substrate of the invention is produced. A low-dislocation region is formed at the portions grown laterally, that is, at the upper parts of the recesses (12), and the produced crystal layer has a high quality. A method of producing a semiconductor crystal comprises separating a semiconductor base into a substrate (1) and a crystal layer (2) at its cavity portion.
(FR) On traite la surface de tirage d'un substrat (1) pour former des projections et des creux. Le fond des creux peut être recouvert d'un masque. Lorsqu'on procède au tirage d'un cristal par dépôt en phase vapeur en utilisant ce substrat, le gaz ne pénètre pas suffisamment dans les creux (12) et le tirage du cristal ne s'effectue qu'à partir de la partie supérieure des projections (11). Comme on peut le voir dans le dessin 1 (b), les unités (20) de cristal sont produites dans la phase initiale de croissance des cristaux. A mesure que progresse la croissance des cristaux, les unités de cristal croissent latéralement à partir des parties supérieures des projections (11) et se rejoignent pour former un film. Au moment opportun, une couche (2) de cristaux couvrant les projections et les creux du substrat (1) se forme, laissant des cavités (13) dans les creux, comme on peut le voir dans le dessin 1(c). On forme ainsi un substrat semiconducteur selon l'invention. Une région à faible dislocation se situe dans les parties de croissance latérale, c'est-à-dire dans les parties supérieures des creux (12), la couche de cristaux produite étant de qualité supérieure. Un procédé de production d'un cristal semiconducteur consiste à séparer une base de semiconducteur en un substrat (1) et une couche (2) de cristaux dans sa partie formant une cavité.
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Designated States: KR, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020020010583EP1184897EP1501118US20040206299US6940098US20070026643
US20070026644