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1. WO2000044088 - HYBRID POWER MOSFET FOR HIGH CURRENT CARRYING CAPACITY

Publication Number WO/2000/044088
Publication Date 27.07.2000
International Application No. PCT/DE2000/000119
International Filing Date 13.01.2000
Chapter 2 Demand Filed 05.07.2000
IPC
H03F 1/22 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
CPC
H03F 1/223
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
223with MOSFET's
H03F 1/226
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
226with junction-FET's
Applicants
  • SIEMENS AKTIENGESELLSCHAFT [DE/DE]; Wittelsbacherplatz 2 D-80333 München, DE (AllExceptUS)
  • BAUDELOT, Eric [FR/DE]; DE (UsOnly)
  • BRUCKMANN, Manfred [DE/DE]; DE (UsOnly)
  • MITLEHNER, Heinz [DE/DE]; DE (UsOnly)
  • WEIS, Benno [DE/DE]; DE (UsOnly)
Inventors
  • BAUDELOT, Eric; DE
  • BRUCKMANN, Manfred; DE
  • MITLEHNER, Heinz; DE
  • WEIS, Benno; DE
Common Representative
  • SIEMENS AKTIENGESELLSCHAFT; Postfach 22 16 34 D-80506 München, DE
Priority Data
199 02 519.322.01.1999DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HYBRID-LEISTUNGS-MOSFET FÜR HOHE STROMTRAGFÄHIGKEIT
(EN) HYBRID POWER MOSFET FOR HIGH CURRENT CARRYING CAPACITY
(FR) MOSFET DE PUISSANCE HYBRIDE DESTINE A UNE INTENSITE DE COURANT ADMISSIBLE ELEVEE
Abstract
(DE)
Die Erfindung bezieht sich auf einen Hybrid-Leistungs-MOSFET mit einem niedersperrenden MOSFET (2) und einem hochsperrenden Sperrschicht-FET (4). Erfindungsgemäß weist diese Kaskodenschaltung wenigstens zwei hochsperrende Sperrschicht-FET (41,...,4n) auf, die elektrisch parallel geschaltet und deren Gate-Anschlüsse (G1, ...,Gn) jeweils mittels einer Verbindungsleitung (81,...,8n) mit dem Source-Anschluß (S') des niedersperrenden MOSFET (2) elektrisch leitend verbunden sind. Somit erhält man einen Hybrid-Leistungs-MOSFET für eine hohe Stromtragfähigkeit, dessen Aufbautechnik infolge der Verwendung von nur einer Steuerleitung und n+1 Chips sich wesentlich vereinfacht hat.
(EN)
The invention relates to a hybrid power MOSFET which consists of a low-blocking capability MOSFET (2) and a high-blocking capability junction-gate FET (4). According to the invention, said cascode connection has at least two high-blocking capability junction gate FET (41,...,4n) which are electrically connected in parallel. The gate junctions (G1,...,Gn) of said junction gate FET are connected in an electrically conducting manner with the source connection (S') of the low-blocking capability MOSFET (2) via respective connection lines (81,...,8n). The invention provides a hybrid power MOSFET for a high current carrying capacity with a substantially simplified layout by using only one control line and n+1 chips.
(FR)
L'invention concerne un transistor à effet de champ à portée isolée (MOSFET) de puissance hybride comprenant un MOSFET à blocage basse tension (2) et un PN-FET à blocage haute tension (4). Selon l'invention, ce circuit cascode présente au moins deux PN-FET à blocage haute tension (41,...,4n) qui sont électriquement montés en parallèle et dont les bornes la grille (G1,...,Gn) sont respectivement électriquement reliées par un câble (81,...,8n) à la borne de source (S') du MOSFET à blocage basse tension (2). On obtient ainsi un MOSFET de puissance hybride pour une intensité de courant admissible élevée et de construction considérablement simplifiée grâce à l'utilisation d'une seule ligne de commande et de puces n+1.
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