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1. WO2000044047 - MICROELECTRONIC STRUCTURE

Publication Number WO/2000/044047
Publication Date 27.07.2000
International Application No. PCT/EP2000/000438
International Filing Date 20.01.2000
Chapter 2 Demand Filed 20.07.2000
IPC
H01L 23/485 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
485consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 23/532 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
CPC
H01L 23/485
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements
482consisting of lead-in layers inseparably applied to the semiconductor body
485consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 23/53238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
53204Conductive materials
53209based on metals, e.g. alloys, metal silicides
53228the principal metal being copper
53238Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applicants
  • INFINEON TECHNOLOGIES AG [DE/DE]; St.-Martin-Str. 53 D-81541 München, DE
Inventors
  • SCHMIDBAUER, Sven; DE
  • RUF, Alexander; DE
  • SCHNABEL, Rainer, Florian; DE
  • HOINKIS, Mark; US
  • WEBER, Stefan; US
Agents
  • FISCHER, Volker; Epping Hermann & Fischer Postfach 12 10 26 D-80034 München, DE
Priority Data
09/234,34120.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MICROELECTRONIC STRUCTURE
(FR) STRUCTURE MICRO-ELECTRONIQUE
Abstract
(EN)
A microelectronic structure comprising grooves (30) and contact openings (25) within a first layer (5) or a substrate (5). A metal nitride layer (45) covering at least partially the said first layer (5) or the substrate (5) comprising a material selected from the group consisting of TiN and WN. On top of that metal nitride layer (45) a tantalum layer (50) is deposited. Finally, a metal (75) is deposited to completely fill the grooves (30) and the contact openings (25).
(FR)
L'invention porte sur une structure micro-électronique comportant des rainures (30) et des ouvertures (25) de contact dans une première couche (5) ou un substrat (5). Une couche (45) de nitrure métallique recouvrant au moins partiellement cette première couche (5) ou substrat comprend un matériau sélectionné dans le groupe comprenant TiN et WN. Une couche (50) de tantale est déposée sur cette couche (45) de nitrure métallique. Et enfin, un métal (75) est déposé de façon à remplir les rainures (30) et les ouvertures (25) de contact.
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