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1. WO2000044039 - RELIABLE VIA STRUCTURES HAVING HYDROPHOBIC INNER WALL SURFACES AND METHODS FOR MAKING THE SAME

Publication Number WO/2000/044039
Publication Date 27.07.2000
International Application No. PCT/US1999/027992
International Filing Date 24.11.1999
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
H01L 21/76814
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76814post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
H01L 21/76826
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76822Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
76826by contacting the layer with gases, liquids or plasmas
H01L 21/76831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76829characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
76831in via holes or trenches, e.g. non-conductive sidewall liners
Applicants
  • KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1 NL-5621 BA Eindhoven, NL
Inventors
  • ANNAPRAGADA, Rao, V.; US
Agents
  • VAN DER VEER, Johannis, L.; INTERNATIONAAL OCTROOIBUREAU B.V. Prof. Holstlaan 6 NL-5656 AA Eindhoven, NL
Priority Data
09/234,23520.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) RELIABLE VIA STRUCTURES HAVING HYDROPHOBIC INNER WALL SURFACES AND METHODS FOR MAKING THE SAME
(FR) STRUCTURES D'INTERCONNEXION POURVUES DE SURFACE DE PAROIS INTERIEURES HYDROPHOBES ET PROCEDES DE FABRICATION ASSOCIES
Abstract
(EN)
A method of making a reliable via hole in a semiconductor device layer, and a reliable via structure having internal wall surface layers that are hydrophobic, and thereby are non moisture absorbing are provided. The inner wall (109) of the via structure has a layer of material having a characteristic of spin on glass (SOG), such that the characteristic is that the outer layer of the SOG oxidizes during photoresist ashing to form a surface layer of silicon dioxide in the via hole wall. In the method, the via structure is placed through a chemical dehydroxylation operation after the ashing operation, such that the layer of silicon dioxide in the via hole wall (109) is converted into a hydrophobic material layer (106). The conversion is performed by introducing a halogen compound suitable for the chemical dehydroxylation operation, wherein the halogen compound may be NH4F or CCl4.
(FR)
L'invention concerne un procédé de fabrication d'un trou d'interconnexion dans une couche de dispositif à semi-conducteur ainsi qu'une structure d'interconnexion pourvue de couches de surface de paroi intérieure qui sont hydrophobes et, par conséquent, n'absorbent pas l'humidité. La paroi intérieure (109) de la structure d'interconnexion comprend une couche de matière présentant une caractéristique de SOG, selon laquelle la couche extérieure du SOG s'oxyde pendant le polissage humide de la photorésine pour former une couche de surface constituée de silice sur la paroi d'interconnexion. Dans ce procédé, la structure d'interconnexion est placée au moyen d'une opération de déshydroxylation chimique suivant l'opération de polissage humide, de sorte que la couche de silice située sur la paroi d'interconnexion (109) se transforme en une couche d'une matière hydrophobe (106). Pour effectuer cette transformation, on introduit un composé halogène convenant à l'opération de déshydroxylation chimique. Ce composé halogène peut être NH4F ou CC14.
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