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1. WO2000044038 - PLASMA ENHANCED CVD PROCESS FOR RAPIDLY GROWING SEMICONDUCTOR FILMS

Publication Number WO/2000/044038
Publication Date 27.07.2000
International Application No. PCT/US2000/001904
International Filing Date 25.01.2000
Chapter 2 Demand Filed 22.08.2000
IPC
C30B 25/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C30B 25/105
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
105by irradiation or electric discharge
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 29/08
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
08Germanium
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/02573
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
Applicants
  • UNIVERSITY OF VERMONT AND STATE AGRICULTURAL COLLEGE [US/US]; 85 South Prospect Street Burlington, VT 05405-0160, US
Inventors
  • VARHUE, Walter, J.; US
Agents
  • MEIER, Lawrence, H.; Downs Rachlin & Martin PLLC 199 Main Street P. O. Box 190 Burlington, VT 05402-0190, US
Priority Data
09/295,65614.09.1999US
60/117,32026.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PLASMA ENHANCED CVD PROCESS FOR RAPIDLY GROWING SEMICONDUCTOR FILMS
(FR) PROCESSUS CVD AMELIORE PAR PLASMA POUR LA CROISSANCE RAPIDE DE FILMS EN SEMICONDUCTEUR
Abstract
(EN)
A process of epitaxially growing a Group (IV) semiconductor film on a surface (WS) of a substrate (W) made of a material comprising one of Si or Ge in a reaction chamber (14) under vacuum. The process includes the steps of heating the substrate to a temperature between 300 °C and 650 °C, then introducing into the reaction chamber a first reactant gas containing one of Si and Ge corresponding to the material comprising the substrate while bombarding the surface with energetic ions having a flux ratio of about between 0.5 and 5 eV/adatom. The first reactant gas may be silane and the substrate made of Si, in which case the semiconductor film grown is Si. Alternatively, the first reactant gas may be germane and the substrate made of Ge, in which case the semiconductor film grown is Ge. Likewise, compounds of Si, Ge and C may be formed by introducing reactant gases comprising Si, Ge and C, for example silane, germane and methane, in the appropriate ratios.
(FR)
L'invention concerne un processus de croissance épitaxiale de film en semiconducteur du groupe IV sur une surface (WS) de substrat (W) en matériau à base de Si ou de Ge, dans une chambre de réaction (14) sous vide. Les étapes du procédé sont les suivantes : chauffer le substrat à une température comprise entre 300 °C et 650 °C, introduire dans la chambre de réaction un premier gaz réactif à base de Si ou de Ge, correspondant au matériau qui constitue le substrat, tout en bombardant la surface avec des ions énergétiques dont le rapport de flux est compris entre environ 0,5 et 5 eV/adatom. Le premier réactif peut être du silane et le substrat peut être en Si, moyennant quoi le film en semiconducteur dont la croissance est obtenue est en Si. Selon une variante, le gaz peut être du germane et le substrat peut être en Ge, moyennant quoi le film en semiconducteur dont la croissance est obtenue est en Ge. De même, on peut former des composés de Si, Ge et C en introduisant des gaz réactifs à base de Si, Ge et C, par exemple silane, germane et méthane, selon des rapports appropriés.
Also published as
Latest bibliographic data on file with the International Bureau