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1. WO2000044034 - METHODS AND CLEANING SOLUTIONS FOR POST-CHEMICAL MECHANICAL POLISHING

Publication Number WO/2000/044034
Publication Date 27.07.2000
International Application No. PCT/US2000/001965
International Filing Date 24.01.2000
Chapter 2 Demand Filed 23.08.2000
IPC
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/321 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
H01L 21/3213 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
CPC
H01L 21/02074
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
02068during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
02074the processing being a planarization of conductive layers
Applicants
  • SPEEDFAM-IPEC CORPORATION [US/US]; 305 N 54th Street Chandler, AZ 85226, US
Inventors
  • GOTKIS, Yehiel, S.; US
  • YANG, Chau-Hwa, Jerry; US
  • DAI, Fen; US
Agents
  • LYCKE, Lawrence, E.; Merchant & Gould P.C. P.O. Box 2903 Minneapolis, MN 55402-0903, US
Priority Data
09/237,20125.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHODS AND CLEANING SOLUTIONS FOR POST-CHEMICAL MECHANICAL POLISHING
(FR) PROCEDES ET SOLUTIONS DE NETTOYAGE POUR POST-POLISSAGE CHIMIQUE ET MECANIQUE
Abstract
(EN)
In accordance with the present invention, methods and compositions are provided for the effective removal of copper by-products from the surface of semiconductor wafers following CMP. The present invention comprises a solution of a volatile copper chelating agent, an organic copper corrosion inhibitor, and a water-soluble, metal hydroxide for cleaning and processing semiconductor wafers. The present invention further comprises a method for cleaning scrub brushes and wafers, and prolonging the life of mechanized scrub brushes following CMP of semiconductor wafers using the solution of the present invention.
(FR)
L'invention concerne des procédés et des compositions permettant d'éliminer efficacement les sous-produits du cuivre sur la surface de plaquettes en semiconducteur après un polissage chimique et mécanique. A cet effet, on utilise une solution d'agent chélateur de cuivre volatil, un inhibiteur de corrosion de cuivre organique, et un hydroxyde métallique hydrosoluble, pour le nettoyage et le traitement des plaquettes. L'invention concerne en outre un procédé de nettoyage pour brosses de récurage et plaquettes, prolongeant la durée de vie des brosses de récurage mécanisées après le polissage chimique et mécanique des plaquettes, qui consiste à utiliser la solution décrite.
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