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1. WO2000044027 - ELECTRON TUBE

Publication Number WO/2000/044027
Publication Date 27.07.2000
International Application No. PCT/JP1999/000213
International Filing Date 21.01.1999
Chapter 2 Demand Filed 01.03.1999
IPC
H01J 31/26 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
31Cathode-ray tubes; Electron-beam tubes
08having a screen on or from which an image or pattern is formed, picked-up, converted, or stored
26Image pick-up tubes having an input of visible light and electric output
H01J 31/49 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
31Cathode-ray tubes; Electron-beam tubes
08having a screen on or from which an image or pattern is formed, picked-up, converted, or stored
49Pick-up tubes adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infra-red radiation
CPC
H01J 2231/50073
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2231Cathode ray tubes or electron beam tubes
50Imaging and conversion tubes
50057characterised by form of output stage
50068Electrical
50073Charge coupled device [CCD]
H01J 31/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
31Cathode ray tubes; Electron beam tubes
08having a screen on or from which an image or pattern is formed, picked up, converted, or stored
26Image pick-up tubes having an input of visible light and electric output
H01J 31/49
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
31Cathode ray tubes; Electron beam tubes
08having a screen on or from which an image or pattern is formed, picked up, converted, or stored
49Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infra-red radiation
Applicants
  • HAMAMATSU PHOTONICS K. K. [JP/JP]; 1126-1, Ichino-cho Hamamatsu-shi Shizuoka 435-8558, JP (AllExceptUS)
  • SUYAMA, Motohiro [JP/JP]; JP (UsOnly)
  • KAGEYAMA, Akihiro [JP/JP]; JP (UsOnly)
  • MURAMATSU, Masaharu [JP/JP]; JP (UsOnly)
Inventors
  • SUYAMA, Motohiro; JP
  • KAGEYAMA, Akihiro; JP
  • MURAMATSU, Masaharu; JP
Agents
  • KITAZAWA, Kazuhiro ; 6F, Yushima Tokyu Building 37-4, Yushima 3-chome Bunkyo-ku Tokyo 113-0034, JP
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTRON TUBE
(FR) TUBE ELECTRONIQUE
Abstract
(EN)
An electron tube (10) is mainly composed of a side tube (12), an input plate (14) having a photocathode (18), a stem (16), and a CCD device (20). The inside of the electron tube (10) is in a high vacuum state. The CCD device (20) is secured to the stem (16), with the back (B) of the CCD device (20) opposed to the photocathode (18). In the CCD device (20), on a semiconductor substrate (64) made of a semiconductor of one conductivity type are formed a buried layer (66), a barrier layer (68), an SiO2 layer (70), a storage electrode layer (72), a transfer electrode layer (74), and a barrier electrode layer (76) in respective predetermined positions. On them, a PSG film (78) is formed over the entire surface (A) to palanarize the surface of the CCD device (20). Further, on the film (78), an SiN film (106) mainly made of SiN is formed over the entire surface (A).
(FR)
La présente invention concerne un tube électronique (10) composé principalement d'un tube latéral (12), d'une plaque d'entrée (14) munie d'une photocathode (18), d'une tige (16) et d'un dispositif à transfert de charge (20). A l'intérieur du tube électronique (10) règne un état de vide poussé. Le dispositif à transfert de charge (20) est fixé à la tige (16) de manière que l'arrière du dispositif fait face à la photocathode (18). Le dispositif à transfert de charge (20) comprend, formées sur un substrat semi-conducteur (64) réalisé dans un semi-conducteur d'un type de conductivité, une couche enterrée (66), une couche barrière (68), une couche de SiO2 (70), une couche d'électrode mémoire (72), une couche d'électrode de transfert (74) et une couche d'électrode barrière (76), dans ces positions respectives prédéterminées. Au-dessus de ces couches, sur toute la surface (A), est formé un film de PSG (78) destiné à planariser la surface du dispositif à transfert de charge (20). En outre, un film de SiN (106) constitué principalement de SiN est formé sur toute la surface (A), au-dessus du film (78).
Also published as
Latest bibliographic data on file with the International Bureau