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1. WO2000043568 - MICROWAVE PLASMA CVD APPARATUS

Publication Number WO/2000/043568
Publication Date 27.07.2000
International Application No. PCT/JP2000/000296
International Filing Date 21.01.2000
Chapter 2 Demand Filed 21.08.2000
IPC
C23C 16/511 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
511using microwave discharges
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
CPC
C23C 16/511
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
511using microwave discharges
H01J 37/32192
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32192Microwave generated discharge
Applicants
  • TOYO KOHAN CO., LTD. [JP/JP]; 2-12, Yonbancho Chiyoda-ku Tokyo 102-8447, JP (AllExceptUS)
  • TANGA, Michifumi [JP/JP]; JP (UsOnly)
Inventors
  • TANGA, Michifumi; JP
Agents
  • OHTA, Akio; Ohta Patent Office New State Manor Building 356 23-1, Yoyogi 2-chome Shibuya-ku Tokyo 151-0053, JP
Priority Data
11/1496522.01.1999JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MICROWAVE PLASMA CVD APPARATUS
(FR) APPAREIL DE DEPOT CHIMIQUE EN PHASE VAPEUR A PLASMA PAR MICRO-ONDES
Abstract
(EN)
A microwave plasma CVD apparatus for forming a film with a suitable thickness uniformly and reliably on even a long substrate placed on a substrate support, comprising a laterally long vacuum enclosure (10), a laterally long substrate support (12) provided in the vacuum enclosure (10) and adapted to support the substrate (11), electrodes (14) arranged at longitudinal intervals above the substrate support (12) and constituting the essential part of plasma generating means, microwave waveguides (20) arranged along at least one outside side of the vacuum enclosure (10) and connected to the electrodes (14) corresponding to the dielectric windows (13) provided at the respective ends of the microwave waveguide (20), gas supply means (15) for supplying a material gas into the vacuum enclosure (10), and an evacuating means (16) for exhausting the gas in the vacuum enclosure (10).
(FR)
Cette invention se rapporte à un appareil de dépôt chimique en phase vapeur à plasma par micro-ondes, qui permet de former un film d'une épaisseur appropriée uniformément et de façon fiable même sur un long substrat placé sur un support porte-substrat et comprenant à cet effet une enceinte à vide latéralement longue (10), un support porte-substrat latéralement long (12) placé dans l'enceinte à vide (10) et destiné à servir de support au substrat (11), des électrodes (14) placées à intervalles longitudinaux au-dessus du support porte-substrat (12) et constituant la partie essentielle de l'organe générateur de plasma, des guides d'ondes à micro-ondes (20) placés le long d'un côté extérieur au moins de l'enceinte à vide (10) et reliés aux électrodes (14) correspondant aux fenêtres diélectriques (13) situées aux extrémités respectives du guide d'ondes à micro-ondes (20), un organe d'alimentation en gaz (15) servant à acheminer une matière en phase gazeuse dans l'enceinte à vide (10), et un organe d'évacuation (16) servant à faire sortir le gaz de l'enceinte à vide (10).
Also published as
Latest bibliographic data on file with the International Bureau