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1. WO2000042704 - SURFACE ACOUSTIC WAVE ELEMENT AND SURFACE ACOUSTIC WAVE DEVICE

Publication Number WO/2000/042704
Publication Date 20.07.2000
International Application No. PCT/JP2000/000107
International Filing Date 12.01.2000
IPC
H03H 3/08 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
H03H 9/05 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
02Details
05Holders or supports
H03H 9/64 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
46Filters
64using surface acoustic waves
CPC
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2924/16195
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
15Details of package parts other than the semiconductor or other solid state devices to be connected
161Cap
1615Shape
16195Flat cap [not enclosing an internal cavity]
H03H 9/0542
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
0538Constructional combinations of supports or holders with electromechanical or other electronic elements
0542consisting of a lateral arrangement
H03H 9/059
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
058for surface acoustic wave devices
059consisting of mounting pads or bumps
H03H 9/1071
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
10Mounting in enclosures
1064for surface acoustic wave [SAW] devices
1071the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
H03H 9/6436
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
46Filters
64using surface acoustic waves
6423Means for obtaining a particular transfer characteristic
6433Coupled resonator filters
6436having one acoustic track only
Applicants
  • KABUSHIKI KAISHA TOSHIBA [JP/JP]; 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa 210-0913, JP (AllExceptUS)
  • KURODA, Yasushi [JP/JP]; JP (UsOnly)
Inventors
  • KURODA, Yasushi; JP
Agents
  • SUYAMA, Saichi; Kandahigashiyama Bldg. 1, Kandatacho 2-chome Chiyoda-ku, Tokyo 101-0046, JP
Priority Data
11/538812.01.1999JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SURFACE ACOUSTIC WAVE ELEMENT AND SURFACE ACOUSTIC WAVE DEVICE
(FR) ELEMENT DE TRAITEMENT DES ONDES ACOUSTIQUES DE SURFACE ET DISPOSITIF DE TRAITEMENT DES ONDES ACOUSTIQUES DE SURFACE
Abstract
(EN)
A surface acoustic wave device the frequency characteristics of which can be flexibly regulated in response to a system request and which can be downsized and enhanced in out-band characteristics, wherein a grounding terminal wired to a comb-teeth-shaped electrode of a 2-port surface acoustic wave element is extended to face the output sides of both input and output signal terminals so as to form a capacitance, and an attenuation region is provided in a frequency band away from a pass band of a surface acoustic wave element by means of a resonance system including the capacitance, whereby it is possible to downsize the device by flip-chip mounting, improve characteristics in a high-frequency band, and solve a problem that an attenuation region cannot be provided in a frequency band away from a pass band due to an inability of forming a resonance system using a bonding wire inductance.
(FR)
La présente invention concerne un dispositif de traitement des ondes acoustiques de surface dont les caractéristiques de fréquence peuvent être réglées de manière souple en réponse à une demande du système, dont le volume peut être réduit et dont les caractéristiques hors-bandes peuvent être améliorées. Une borne de mise à la terre reliée par un fil à une électrode en dents de peigne d'un élément de traitement des ondes acoustiques de surface à deux accès est allongée de manière qu'elle fait face aux sorties à la fois des bornes d'entrée et de sortie pour former une capacité, et une zone d'atténuation est formée dans une bande de fréquence éloignée de la bande passante d'un élément de traitement des ondes acoustiques de surface grâce à un système de résonance incluant la capacité. La présente invention permet de réduire le volume du dispositif grâce à un montage à bosses soudées, d'améliorer les caractéristiques dans la bande des hautes fréquences, et de résoudre le problème qui empêchait la formation d'une zone d'atténuation dans une bande de fréquence éloignée d'une bande passante à cause de l'impossibilité de former un système de résonance à l'aide d'une bobine d'inductance à fil de connexion.
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