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1. WO2000042668 - SEMICONDUCTING POLYMER FIELD EFFECT TRANSISTOR

Publication Number WO/2000/042668
Publication Date 20.07.2000
International Application No. PCT/US1999/030612
International Filing Date 22.12.1999
Chapter 2 Demand Filed 26.07.2000
IPC
H01L 51/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30Selection of materials
CPC
H01L 51/0036
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0035comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline
0036Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
H01L 51/0038
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0035comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline
0038Poly-phenylenevinylene and derivatives
H01L 51/0039
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0035comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline
0039Polyeflurorene and derivatives
H01L 51/0043
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0034Organic polymers or oligomers
0043Copolymers
H01L 51/0059
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
0059Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
H01L 51/0516
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0516characterised by the gate dielectric
Applicants
  • THE DOW CHEMICAL COMPANY [US/US]; 2030 Dow Center Midland, MI 48674, US
Inventors
  • BERNIUS, Mark, T.; US
  • WOO, Edmund, P.; US
Agents
  • ZERULL, Susan, Moeller; Intellectual Property P.O. Box 1967 Midland, MI 48641-1967, US
Priority Data
60/116,11215.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTING POLYMER FIELD EFFECT TRANSISTOR
(FR) TRANSISTOR POLYMERE SEMI-CONDUCTEUR A EFFET DE CHAMP
Abstract
(EN)
A field effect transistor is made of five parts. The first part is an insulator layer, the insulator layer being an electrical insulator such as silica, the insulator layer having a first side and a second side. The second part is a gate, the gate being an electrical conductor such as silver, the gate being positioned on the first side of the insulator layer. The third part is a semiconductor layer, the semiconductor layer including a polymer, at least ten weight percent of the monomer units of the polymer being a 9-substituted fluorene unit and/or a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being on the second side of the insulator layer. The fourth part is a source, the source being an electrical conductor such as silver, the source being in electrical contact with the first end of the semiconductor layer. The fifth part is a drain, the drain being an electrical conductor such as silver, the drain being in electrical contact with the second end of the semiconductor layer. A negative voltage bias applied to the gate causes the formation of a conduction channel in the semiconductor layer from the source to the drain. On the other hand, a positive bias applied to the gate causes the formation of an electron conducting channel in the semiconductor layer.
(FR)
Un transistor à effet de champ comporte cinq éléments. Le premier élément est une couche isolante faite d'un isolant électrique, par exemple le silicium, et possède un premier et un second côtés. Le deuxième élément est une porte faite d'un conducteur électrique, par exemple l'argent, est posé sur le premier côté de la couche isolante. Le troisième élément est une couche semi-conductrice comprenant un polymère dont au moins 10 pour cent en poids des unités monomères sont un fluorène 9-substitué et/ou un fluorène 9,9-substituté. Ladite couche semi-conductrice possède un premier et un second côtés ainsi qu'une première et une seconde extrémités. Le second côté de la couche semi-conductrice est posé sur le second côté de la couche isolante. Le quatrième élément, une source faite d'un conducteur électrique, par exemple l'argent, est en contact électrique avec la première extrémité de la couche semi-conductrice. Le cinquième élément est un drain fait d'un conducteur électrique, par exemple l'argent, est en contact électrique avec la seconde extrémité de la couche semi-conductrice. Une polarisation de tension négative, appliquée à la porte, provoque la formation d'un canal de conduction dans la couche semi-conductrice, de la source au drain. Par ailleurs, une polarisation positive appliquée à la porte provoque la formation d'un canal conducteur d'électrons dans la couche semi-conductrice.
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