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1. WO2000042667 - A SEMICONDUCTOR DEVICE HAVING A METAL BARRIER LAYER FOR A DIELECTRIC MATERIAL HAVING A HIGH DIELECTRIC CONSTANT AND A METHOD OF MANUFACTURE THEREOF

Publication Number WO/2000/042667
Publication Date 20.07.2000
International Application No. PCT/US2000/000696
International Filing Date 11.01.2000
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
H01L 29/49 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
49Metal-insulator semiconductor electrodes
CPC
H01L 21/02183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02183the material containing tantalum, e.g. Ta2O5
H01L 21/31604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
314Inorganic layers
316composed of oxides or glassy oxides or oxide based glass
31604Deposition from a gas or vapour
H01L 28/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
H01L 28/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
55with a dielectric comprising a perovskite structure material
56the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
H01L 29/4966
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
4966the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
Applicants
  • LUCENT TECHNOLOGIES INC. [US/US]; 600 Mountain Avenue Murray Hill, NJ 07974-0636, US
Inventors
  • ALERS, Glenn, B.; US
  • MERCHANT, Sailesh, M.; US
  • ROY, Pradip, K.; US
Agents
  • MEDER, Martin; Lucent Technologies Inc. P.O. Box 679 Holmdel, NJ 07733-3030, US
Priority Data
60/115,84213.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A SEMICONDUCTOR DEVICE HAVING A METAL BARRIER LAYER FOR A DIELECTRIC MATERIAL HAVING A HIGH DIELECTRIC CONSTANT AND A METHOD OF MANUFACTURE THEREOF
(FR) DISPOSITIF A SEMI-CONDUCTEURS PRESENTANT UNE COUCHE FORMANT BARRIERE METALLIQUE POUR UN MATERIAU DIELECTRIQUE AVEC UNE CONSTANTE DIELECTRIQUE ELEVEE ET PROCEDE DE FABRICATION DE CE DERNIER
Abstract
(EN)
The present invention provides a semiconductor device that has a metal barrier layer (145, 235) for a dielectric material, which can be used in an integrated circuit, if so desired. The semiconductor device provides a capacitance to the integrated circuit and in a preferred embodiment comprises a first layer (135, 220) located on a surface of the integrated circuit. A metal barrier layer (145, 235) is located on the first layer (135, 220) and is susceptible to oxidation by oxygen. A high K capacitor dielectric layer (150, 240) (i.e., a higher K than silicon dioxide) that contains oxygen, such as tantalum pentoxide, is located over the metal barrier layer (145, 235). The semiconductor device further includes a second layer (110, 225) located over the high K capacitor dielectric layer (150, 240).
(FR)
La présente invention concerne un dispositif à semi-conducteurs qui comporte une couche formant barrière métallique (145, 235) pour un matériau diélectrique, qui peut être utilisé dans un circuit électrique si nécessaire. Ce dispositif à semi-conducteurs fournit une capacité au circuit intégré et selon un mode de réalisation préféré il comprend une première couche (135, 220) placée sur une surface du circuit intégré. Une couche formant barrière métallique (145, 235) est placée sur la première couche (135, 220) est peut être oxydée par l'oxygène. Une couche diélectrique de condensateur à constante diélectrique élevée (150, 240) (c'est-à-dire, avec une constante diélectrique supérieure à celle du dioxyde de silicium) qui contient de l'oxygène, comme du pentoxyde de tantale est placée sur la couche formant barrière métallique (145, 235). Ce dispositif à semi-conducteurs comprend, en outre, une deuxième couche (110, 225) placée sur la couche diélectrique à constante diélectrique élevée (150, 240).
Also published as
GBGB0020578.1
Latest bibliographic data on file with the International Bureau