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1. WO2000042666 - INERTIA FORCE SENSOR AND METHOD FOR PRODUCING INERTIA FORCE SENSOR

Publication Number WO/2000/042666
Publication Date 20.07.2000
International Application No. PCT/JP1999/000078
International Filing Date 13.01.1999
IPC
G01L 9/00 2006.01
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
G01P 15/08 2006.01
GPHYSICS
01MEASURING; TESTING
PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION OR SHOCK; INDICATING PRESENCE OR ABSENCE OF MOVEMENT;  INDICATING DIRECTION OF MOVEMENT 
15Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
02by making use of inertia forces
08with conversion into electric or magnetic values
G01P 15/09 2006.01
GPHYSICS
01MEASURING; TESTING
PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION OR SHOCK; INDICATING PRESENCE OR ABSENCE OF MOVEMENT;  INDICATING DIRECTION OF MOVEMENT 
15Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
02by making use of inertia forces
08with conversion into electric or magnetic values
09by piezo-electric pick-up
G01P 15/125 2006.01
GPHYSICS
01MEASURING; TESTING
PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION OR SHOCK; INDICATING PRESENCE OR ABSENCE OF MOVEMENT;  INDICATING DIRECTION OF MOVEMENT 
15Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
02by making use of inertia forces
08with conversion into electric or magnetic values
125by capacitive pick-up
CPC
B81B 2201/025
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
02Sensors
0228Inertial sensors
025Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
B81B 2203/0118
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
01Suspended structures, i.e. structures allowing a movement
0118Cantilevers
B81B 2203/0315
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
03Static structures
0315Cavities
B81C 1/00182
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00134comprising flexible or deformable structures
00182Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
B81C 2201/0114
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2201Manufacture or treatment of microstructural devices or systems
01in or on a substrate
0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
0111Bulk micromachining
0114Electrochemical etching, anodic oxidation
G01L 9/0042
GPHYSICS
01MEASURING; TESTING
LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements
0041Transmitting or indicating the displacement of flexible diaphragms
0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
Applicants
  • MITSUBISHI DENKI KABUSHIKI KAISHA [JP/JP]; 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8310, JP (AllExceptUS)
  • OHJI, Hiroshi [JP/JP]; JP (UsOnly)
  • TSUTSUMI, Kazuhiko [JP/JP]; JP (UsOnly)
  • FRENCH, Patrick, J. [IE/NL]; NL (UsOnly)
Inventors
  • OHJI, Hiroshi; JP
  • TSUTSUMI, Kazuhiko; JP
  • FRENCH, Patrick, J.; NL
Agents
  • AOYAMA, Tamotsu ; Aoyama & Partners IMP Building 3-7, Shiromi 1-chome Chuo-ku, Osaka-shi Osaka 540-0001, JP
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) INERTIA FORCE SENSOR AND METHOD FOR PRODUCING INERTIA FORCE SENSOR
(FR) CAPTEUR DE FORCE D'INERTIE ET PROCEDE DE REALISATION D'UN TEL CAPTEUR DE FORCE D'INERTIE
Abstract
(EN)
An inertia force sensor comprising a mass body (11) displaced when a force is applied to the mass body (11), at least one holding beam (12) holding the mass body (11), and a fixing section (13) fixing one end of the holding beam (12) so as to sensing the inertia force acting on the mass body (11) based on the displacement of the mass body (11), characterized in that the mass body (11) has a hollow structure made by removing the inside of a silicon substrate (1) by one process of etching, and the fixing section (13) is at least a part of the main body of the silicon substrate (1). Since the inertia force sensor is made of single crystal silicon, the mechanical characteristics and reliability are greatly imporoved.
(FR)
La présente invention concerne un capteur de force d'inertie comprenant un corps de masse (11) qui se déplace lors de l'application d'une force au corps de masse (11), au moins un faisceau de régénération (12) retenant le corps de masse (11), et une section de fixation (13) permettant de fixer une extrémité du faisceau de régénération (12) afin de capter la force d'inertie exercée sur le corps de masse (11) en fonction du déplacement du corps de masse. L'invention est caractérisée en ce que le corps de masse (11) possède une structure creuse réalisée par l'enlèvement de la partie intérieure d'un substrat de silicone (1) mettant en oeuvre un procédé de gravure, et la section de fixation (13) est au moins une partie du corps principal du substrat de silicium (1). Grâce au fait que le capteur de force d'inertie est réalisé en silicium monocristallin, les caractéristiques mécaniques et la fiabilité en sont considérablement améliorées.
Also published as
US09658484
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