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1. WO2000042662 - POWER SEMICONDUCTOR STRUCTURAL PART WITH A MESA EDGE

Publication Number WO/2000/042662
Publication Date 20.07.2000
International Application No. PCT/DE2000/000086
International Filing Date 12.01.2000
IPC
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
CPC
H01L 29/0615
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
H01L 29/0661
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0661specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
H01L 29/0834
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
083Anode or cathode regions of thyristors or gated bipolar-mode devices
0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
H01L 29/7396
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
7395Vertical transistors, e.g. vertical IGBT
7396with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
H01L 29/744
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
74Thyristor-type devices, e.g. having four-zone regenerative action
744Gate-turn-off devices
H01L 29/8613
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
8613Mesa PN junction diodes
Applicants
  • EUPEC EUROPÄISCHE GESELLSCHAFT FÜR LEISTUNGSHALBLEITER MBH & CO. KG [DE/DE]; Max-Planck-Strasse 5 D-59581 Warstein-Belecke, DE (AllExceptUS)
  • BARTHELMESS, Reiner [DE/DE]; DE (UsOnly)
  • SCHMIDT, Gerhard [DE/DE]; DE (UsOnly)
Inventors
  • BARTHELMESS, Reiner; DE
  • SCHMIDT, Gerhard; DE
Common Representative
  • EUPEC EUROPÄISCHE GESELLSCHAFT FÜR LEISTUNGSHALBLEITER MBH & CO. KG; Zedlitz, Peter Postfach 22 13 17 D-80503 München, DE
Priority Data
199 00 808.612.01.1999DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) LEISTUNGSHALBLEITERBAUELEMENT MIT MESA-RANDABSCHLUSS
(EN) POWER SEMICONDUCTOR STRUCTURAL PART WITH A MESA EDGE
(FR) COMPOSANT A SEMI-CONDUCTEUR DE PUISSANCE A BORD MESA
Abstract
(DE)
Die Erfindung betrifft ein asymmetrisch sperrendes Leistungshalbleiterbauelement, bei dem im Randbereich unterhalb der aus dem Halbleiterkörper (1) herausgeätzten Bereiche (Ätzschultern) Feldstopzonen (11) vom selben Leitungstyp wie in der Innenzone (2) vorgesehen sind. Diese Feldstopzonen (11), die typischerweise an die Innenzone sowie an die Emitterzone angeschlossen sind, grenzen an die poliergeätzte, damagefreie Oberfläche der herausgeätzten Ätzschultern (12) an. Die Dotierungskonzentration dieser Feldstopzonen (11) ist dabei derart eingestellt, daß sich von der Oberfläche der Ätzschultern (12) in die Tiefe des Halbleiterkörpers hinein ein abnehmender Gradient im Konzentrationsverlauf der Dotierung ergibt. Auf diese Weise kann selbst bei Extrembedingungen sichergestellt werden, daß auch im Randbereich (RB) des Leistungshalbleiterbauelementes die Volumen-Durchbruchsspannung gewährleistet wird. Die vorliegende Erfindung ist insbesondere bei in Mesa-Struktur ausgebildeten Leistungshalbleiterbauelementen, insbesondere bei pin-Dioden, asymmetrischen Thyristoren wie z.B. GTOs, IGBTs und dergleichen anwendbar.
(EN)
The invention relates to an asymmetrically-locking power semiconductor structural part. Field stop zones of the same conducting type as in the inner zone are provided in the border area underneath the areas which are etched out (etching shoulders) from the semiconductor body. Said field stop zones are typically connected to the inner zone and to the emitter zone and are adjacent the polish-etched, damage-free surface of the etched-out etching shoulders. The doping concentration of said field stop zones is adjusted in such a way that a decreasing gradient results in the concentration gradient of the doping. Said decreasing gradient extends from the surface of the etching shoulders to the depth of the semiconductor body. According to the invention, the volume breakdown voltage can be secured under extreme conditions even in the bordering area of the power semiconductor structural part. The present invention is especially useful for power semiconductor structural parts which are embodied in a mesa structure, especially in pin diodes, asymmetric thyristors as for example GTOs, IGBTs and the like.
(FR)
L'invention concerne un composant à semi-conducteur de puissance à blocage asymétrique, dans lequel il est prévu des zones d'arrêt de champ (11) du même type de puissance que dans la zone intérieure (2), dans la zone marginale en dessous des zones gravées (épaulements de gravure). Ces zones d'arrêt de champ (11) raccordées de manière générale à la zone intérieure et à la zone émettrice, jouxtent la surface toute sécurité gravée par polissage des épaulements de gravure (12). A cet effet, la concentration de dopage de ces zones d'arrêt de champ (11) est ajustée de manière à produire un gradient de la courbe de concentration du dopage, diminuant entre la surface des épaulements de gravure (12) jusque dans l'épaisseur du corps à semi-conducteur. Ce système permet de garantir, même dans des conditions extrêmes, la tension de rupture en volume, y compris dans la zone marginale (RB) du composant à semi-conducteur de puissance. L'invention s'utilise notamment dans des composants à semi-conducteurs de puissance de structure mesa, en particulier dans des diodes pin, des thyristors asymétriques, tels que par ex. des GTO, des IGBT et similaires.
Also published as
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