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1. WO2000042660 - FERROELECTRIC MEMORY WITH FERROELECTRIC THIN FILM AND METHOD OF FABRICATION

Publication Number WO/2000/042660
Publication Date 20.07.2000
International Application No. PCT/US2000/000379
International Filing Date 07.01.2000
Chapter 2 Demand Filed 02.08.2000
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 27/115 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
CPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
H01L 27/11502
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11502with ferroelectric memory capacitors
H01L 28/55
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
55with a dielectric comprising a perovskite structure material
H01L 28/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
60Electrodes
Applicants
  • SYMETRIX CORPORATION [US/US]; 5055 Mark Dabling Boulevard Colorado Springs, CO 80918, US
  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Kadoma Kadoma-shi Osaka 571-8501, JP
Inventors
  • SOLAYAPPAN, Narayan; US
  • JOSHI, Vikram; US
  • PAZ DE ARAUJO, Carlos, A.; US
  • MCMILLAN, Larry, D.; US
  • HAYASHI, Shinichiro; JP
  • OTSUKI, Tatsuo; JP
Agents
  • FOREST, Carl, A. ; Patton Boggs LLP P.O. Box 270930 Louisville, CO 80027, US
Priority Data
09/228,57811.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FERROELECTRIC MEMORY WITH FERROELECTRIC THIN FILM AND METHOD OF FABRICATION
(FR) MEMOIRE FERROELECTRIQUE AVEC FILM MINCE FERROELECTRIQUE ET SON PROCEDE DE FABRICATION
Abstract
(EN)
A coating of liquid precursor containing a metal is applied to a first electrode (122), baked on a hot plate in oxygen ambient at a temperature not exceeding 300 °C for five minutes, then RTP annealed at 675 °C for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700 °C for one hour to form a thin film of layered superlattice material (124) with a thickness not exceeding 90 nm. A second electrode (126) is applied to form a capacitor (128), and a post-anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700 °C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8 $m(F) u $m(F) 1.0, 2.0 $m(F) v $m(F) 2.3, and 1.9 $m(F) w $m(F) 2.1.
(FR)
Cette invention concerne un revêtement de précurseur liquide renfermant un métal qui est appliqué sur une première électrode (122), cuit à l'oxygène ambiant pendant cinq minutes sur une plaque chaude à une température maximum de 300 °C, puis soumis à un recuit RTP (rapid thermal processing) à 675 °C pendant 30 secondes. On soumet ensuite le revêtement à un recuit dans l'oxygène ou l'azote ambiant à 700 °C pendant une heure de manière à former une mince couche de matériau à structure hétérarchique (124) d'une épaisseur de 90 nm maximum. On dépose une seconde électrode (90) qui forme un condensateur (128) et l'on procède à un traitement de post-recuit dans l'oxygène ou l'azote ambiant à une température maximum de 700 °C. Si le matériau est du strontium-bismuth-tantalate, le précurseur contient u équivalents molaires de strontium, v équivalents molaires de bismuth et w équivalents molaires de tantale, avec 0,8 $m(F) u $m(F) 1,0; 2,0 $m(F) v $m(F) 2,3 et 1,9 $m(F) w $m(F) 2,1.
Latest bibliographic data on file with the International Bureau