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1. WO2000042658 - ESD PROTECTIVE TRANSISTOR

Publication Number WO/2000/042658
Publication Date 20.07.2000
International Application No. PCT/EP1999/010481
International Filing Date 30.12.1999
Chapter 2 Demand Filed 02.08.2000
IPC
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
H01L 27/0259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0259using bipolar transistors as protective elements
Applicants
  • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. [DE/DE]; Leonrodstrasse 54 D-80636 München, DE (AllExceptUS)
  • ROBERT BOSCH GMBH [DE/DE]; Wernerstrasse 1 D-70469 Stuttgart-Feuerbach, DE (AllExceptUS)
  • WOLF, Heinrich [DE/DE]; DE (UsOnly)
  • WILKENING, Wolfgang [DE/DE]; DE (UsOnly)
  • METTLER, Stephan [DE/DE]; DE (UsOnly)
Inventors
  • WOLF, Heinrich; DE
  • WILKENING, Wolfgang; DE
  • METTLER, Stephan; DE
Agents
  • SCHOPPE, Fritz ; Schoppe, Zimmermann & Stöckeler Postfach 71 08 67 D-81458 München, DE
Priority Data
199 01 480.915.01.1999DE
199 50 811.921.10.1999DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) ESD-SCHUTZTRANSISTOR
(EN) ESD PROTECTIVE TRANSISTOR
(FR) TRANSISTOR DE SECURITE A DISSIPATION ELECTROSTATIQUE
Abstract
(DE)
Ein ESD-Schutztransistor weist einen in einer schwach dotierten p-Wanne (32) angeordneten stark dotierten p-Basisbereich (34), der mit einem ersten Anschluss (46) versehen ist, auf. In der schwach dotierten p-Wanne ist ferner ein stark dotierter n-Emitterbereich (36) angeordnet. Ein stark dotierter n-Kollektorbereich (44) ist durch einen schwach dotierten n-Bereich (38) von der schwach dotierten p-Wanne (32) getrennt und mit einem zweiten Anschluss (48) versehen. Der stark dotierte n-Emitterbereich (36) ist nicht mit dem stark dotierten Basisbereich (34) kurzgeschlossen.
(EN)
The invention relates to an ESD protective transistor comprising a highly doped p-base region (34) which is arranged in a lightly doped p-trough (32) and which is provided with a first terminal (46). A highly doped n-emitter region (36) is also arranged in the lightly doped p-trough. A highly doped n-collector region (44) is separated from the lightly doped p-trough (32) by a lightly doped n-region (38) and is provided with a second terminal (48). The highly doped n-emitter region (36) is not short-circuited with the highly doped base region (34).
(FR)
L'invention concerne un transistor de sécurité à dissipation électrostatique comportant une région de base de type p (34) fortement dopée, située dans un auget de type p (32) faiblement dopé. La région de type p est munie d'une première connexion (46). Une région émettrice de type n (36) fortement dopée est en outre prévue dans l'auget de type p faiblement dopé. Une région collectrice de type n (44) fortement dopée est séparée de l'auget de type p (32) faiblement dopé par une région de type n (38) faiblement dopée et est munie d'une seconde connexion (48). La région émettrice de type n (36) fortement dopée n'est pas court-circuitée avec la région de base (34) fortement dopée.
Also published as
Latest bibliographic data on file with the International Bureau